Full Name
Liu Rong
(not current staff)
Rong, L.
Liu, R.
Liu, R.S.


Results 1-20 of 60 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
126-Mar-20071.31 μm GaAs-based heterojunction p-i-n photodetectors using InGaAsNSb as the intrinsic layer grown by molecular beam epitaxyCheah, W.K.; Fan, W.J.; Yoon, S.F.; Zhang, D.H.; Ng, B.K.; Loke, W.K.; Liu, R. ; Wee, A.T.S. 
22000An XPS study of silicon oxynitride rapid thermally grown in nitric oxideLai, W.H.; Li, M.F. ; Pan, J.S.; Liu, R. ; Chan, L.; Chua, T.C.
31-Jun-2006Analysis and optimization of the annealing mechanisms in (In)GaAsN on GaAsCheah, W.K.; Fan, W.J.; Yoon, S.F.; Ma, B.S.; Ng, T.K.; Liu, R. ; Wee, A.T.S. 
420-Oct-2001Annealing effects of tantalum thin films sputtered on [001] silicon substrateLiu, L. ; Gong, H. ; Wang, Y. ; Wang, J. ; Wee, A.T.S ; Liu, R. 
5Jan-2005Atomic force microscopy study of hexagonal boron nitride film growth on 6H-SiC (0001)Chen, W. ; Loh, K.P. ; Lin, M.; Liu, R. ; Wee, A.T.S. 
61-Mar-2006Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealingZhao, J.; Chen, J.; Feng, Z.C.; Chen, J.L.; Liu, R. ; Xu, G.
715-May-2002Behaviour of ionized metal plasma deposited Ta diffusion barrier between Cu and SiO2Maung Latt, K.; Park, H.S.; Li, S.; Rong, L. ; Osipowicz, T. ; Zhu, W.G.; Lee, Y.K.
81999Characterization of a low-k organic spin-on-glass as an intermetal dielectricWang, C.Y.; Zheng, J.Z.; Shen, Z.X. ; Xu, Y.; Lim, S.L.; Liu, R. ; Huan, A.C.H. 
9Sep-2004Characterization of Cu/Ta/ultra low-k porous polymer structures for multilevel interconnectsYang, L.Y.; Zhang, D.H.; Li, C.Y.; Liu, R. ; Wee, A.T.S. ; Foo, P.D.
10Feb-2004Characterization of delta-doped B/Si multilayers by low-energy secondary ion mass spectrometryLiu, R. ; Wee, A.T.S. ; Shen, D.H.; Takenaka, H.
11May-2005Characterizations of InzGa1-zAs1-x-y Nx Sby P-i-N structures grown on GaAs by molecular beam epitaxyCheah, W.K.; Fan, W.J.; Tan, K.H.; Yoon, S.F.; Zhang, D.H.; Mei, T.; Liu, R. ; Wee, A.T. 
1215-Mar-2006Co growth on Si(0 0 1) and Si(1 1 1) surfaces: Interfacial interaction and growth dynamicsPan, J.S.; Liu, R.S. ; Zhang, Z.; Poon, S.W. ; Ong, W.J.; Tok, E.S. 
1315-Jun-2004Co-doping carbon tetrabromide (CBr4) and antimony (Sb) on GaAs [1 0 0] in solid source molecular beam epitaxyCheah, W.K.; Fan, W.J.; Yoon, S.F.; Liu, R. ; Wee, A.T.S. 
1410-May-2006Comparative investigation of TaN and SiCN barrier layer for Cu/ultra low k integrationYang, L.Y.; Zhang, D.H.; Li, C.Y.; Liu, R. ; Lu, P.W.; Foo, P.D.; Wee, A.T.S. 
15Aug-2004Comparative study of Ta and TaN(N) in the barrier/ultra low k structures for deep submicron integrated circuitsYang, L.Y.; Zhang, D.H.; Li, C.Y.; Liu, R. ; Wee, A.T.S. ; Foo, P.D.
163-Jun-2002Comparison of nitrogen compositions in the as-grown GaNxAs 1-x on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopyFan, W.J.; Yoon, S.F.; Ng, T.K.; Wang, S.Z.; Loke, W.K.; Liu, R. ; Wee, A. 
1720-Jan-2002Crystalline phase separation of InGaN layer materials prepared by metalorganic chemical vapor depositionFeng, Z.C.; Yang, T.R.; Liu, R. ; Wee, A.T.S. 
182003Defects and surfactant action of antimony on GaAs and GaAs 1-xNxon GaAs [100] by molecular beam epitaxyCheah, W.K.; Fan, W.J.; Yoon, S.F.; Wicaksono, S.; Liu, R. ; Wee, A.T.S. 
191-Aug-2004Determination of nitrogen composition in GaNxAs1-x epilayer on GaAsFan, W.J.; Yoon, S.F.; Cheah, W.K.; Loke, W.K.; Ng, T.K.; Wang, S.Z.; Liu, R. ; Wee, A. 
20Apr-2003Dynamics and surface segregation during GSMBE of Si1-yCy and Si1-x-yGexCy on the Si(0 0 1) surfacePrice, R.W.; Tok, E.S. ; Liu, R. ; Wee, A.T.S. ; Woods, N.J.; Zhang, J.