Please use this identifier to cite or link to this item:
|Title:||Determination of nitrogen composition in GaNxAs1-x epilayer on GaAs||Authors:||Fan, W.J.
|Keywords:||A1. High resolution X-ray diffraction
A1. Secondary-ion mass spectroscopy
A3. Molecular beam epitaxy
|Issue Date:||1-Aug-2004||Citation:||Fan, W.J., Yoon, S.F., Cheah, W.K., Loke, W.K., Ng, T.K., Wang, S.Z., Liu, R., Wee, A. (2004-08-01). Determination of nitrogen composition in GaNxAs1-x epilayer on GaAs. Journal of Crystal Growth 268 (3-4 SPEC. ISS.) : 470-474. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2004.04.074||Abstract:||High-resolution X-ray diffraction (HRXRD) and secondary-ion mass spectroscopy (SIMS) were used to measure the N compositions of a series of as-grown GaNAs samples grown by solid-source molecular-beam epitaxy. We found that for the coherent samples, N compositions measured by the two methods agree well at lower N compositions (x3%). The HRXRD measurement by using Vegard's law to extract the lattice constant of GaNAs underestimates N composition at larger N compositions. We found that the underestimation is 8.1% at the xSIMS=3.7%. Partially strain relaxed samples were also studied by using (115) XRD mapping. The strain relaxation may cause N composition underestimated by XRD. © 2004 Elsevier B.V. All rights reserved.||Source Title:||Journal of Crystal Growth||URI:||http://scholarbank.nus.edu.sg/handle/10635/115402||ISSN:||00220248||DOI:||10.1016/j.jcrysgro.2004.04.074|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 18, 2019
WEB OF SCIENCETM
checked on Oct 10, 2019
checked on Oct 11, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.