Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jcrysgro.2004.04.074
Title: Determination of nitrogen composition in GaNxAs1-x epilayer on GaAs
Authors: Fan, W.J.
Yoon, S.F.
Cheah, W.K.
Loke, W.K.
Ng, T.K.
Wang, S.Z.
Liu, R. 
Wee, A. 
Keywords: A1. High resolution X-ray diffraction
A1. Secondary-ion mass spectroscopy
A3. Molecular beam epitaxy
B1. GaAsN
Issue Date: 1-Aug-2004
Citation: Fan, W.J., Yoon, S.F., Cheah, W.K., Loke, W.K., Ng, T.K., Wang, S.Z., Liu, R., Wee, A. (2004-08-01). Determination of nitrogen composition in GaNxAs1-x epilayer on GaAs. Journal of Crystal Growth 268 (3-4 SPEC. ISS.) : 470-474. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2004.04.074
Abstract: High-resolution X-ray diffraction (HRXRD) and secondary-ion mass spectroscopy (SIMS) were used to measure the N compositions of a series of as-grown GaNAs samples grown by solid-source molecular-beam epitaxy. We found that for the coherent samples, N compositions measured by the two methods agree well at lower N compositions (x3%). The HRXRD measurement by using Vegard's law to extract the lattice constant of GaNAs underestimates N composition at larger N compositions. We found that the underestimation is 8.1% at the xSIMS=3.7%. Partially strain relaxed samples were also studied by using (115) XRD mapping. The strain relaxation may cause N composition underestimated by XRD. © 2004 Elsevier B.V. All rights reserved.
Source Title: Journal of Crystal Growth
URI: http://scholarbank.nus.edu.sg/handle/10635/115402
ISSN: 00220248
DOI: 10.1016/j.jcrysgro.2004.04.074
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