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Title: Co growth on Si(0 0 1) and Si(1 1 1) surfaces: Interfacial interaction and growth dynamics
Authors: Pan, J.S.
Liu, R.S. 
Zhang, Z.
Poon, S.W. 
Ong, W.J.
Tok, E.S. 
Keywords: Cobalt
Cobalt silicide
Growth mode
Hydrogen termination
Metal-semiconductor interface
Surface morphology
X-ray photoelectron spectroscopy
Issue Date: 15-Mar-2006
Citation: Pan, J.S., Liu, R.S., Zhang, Z., Poon, S.W., Ong, W.J., Tok, E.S. (2006-03-15). Co growth on Si(0 0 1) and Si(1 1 1) surfaces: Interfacial interaction and growth dynamics. Surface Science 600 (6) : 1308-1318. ScholarBank@NUS Repository.
Abstract: In situ X-ray photoelectron spectroscopy (XPS) and ex situ atomic force microscopy (AFM) were used to study the growth of thin cobalt films at room temperature (RT) on both clean and H-terminated Si(0 0 1) and Si(1 1 1) surfaces. The growth proceeds by first forming an initial CoSi2-like phase at the growth front of the Si substrate. With increasing Co coverage the interfacial layer composition becomes richer in Co and eventually a metallic Co film is formed on top. Hydrogen termination of the Si surface did not suppress the reaction of Co and Si. A pseudo-layer-by-layer growth mode is proposed to describe the growth of Co on H-terminated Si surfaces, while closed-packed small island growth occurs on clean Si surfaces. The difference in growth mode can be attributed to the increase in the surface mobility of Co adatoms in the presence of hydrogen. © 2006 Elsevier B.V. All rights reserved.
Source Title: Surface Science
ISSN: 00396028
DOI: 10.1016/j.susc.2006.01.029
Appears in Collections:Staff Publications

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