Full Name
Eng Soon Tok
Tok, E.-S.
Tok, E.
Tok, Eng Soon
Tok Eng Soon
Soon Tok, E.
Tok E.S.
Tok, E.S.
Main Affiliation


Results 1-20 of 116 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
11-Jun-20046H-SiC(0 0 0 1) phase transition: Evolution of the (6 × 6) magic clustersTok, E.S. ; Ong, W.J.; Wee, A.T.S. 
213-Jan-2014Above-bandgap optical properties of biaxially strained GeSn alloys grown by molecular beam epitaxyRichard D'Costa, V.; Wang, W.; Zhou, Q. ; Soon Tok, E. ; Yeo, Y.-C. 
310-Oct-2000Adsorption and coadsorption of hydrogen and fluorine on the Si(100)-(2×1) surfaceYang, C. ; Kang, H.C. ; Tok, E.S. 
42006Adsorption and diffusion of Co on the Si(001) surfacePeng, G.W. ; Huan, A.C.H.; Tok, E.S. ; Feng, Y.P. 
5Nov-2012Anomalous scaling behaviour of cobalt cluster size distributions on graphite, epitaxial graphene and carbon-rich (6√3 × 6√3)R30°Poon, S.W. ; Wee, A.T.S. ; Tok, E.S. 
626-Apr-2012Architecturing covalently bonded organic bilayers on the Si(111)-(7 × 7) surface via in situ photoinduced reactionZhang, Y.P. ; He, J.H.; Xu, G.Q. ; Tok, E.S. 
72-Nov-2006C60 on SiC nanomeshChen, W. ; Zhang, H.L. ; Xu, H. ; Tok, E.S. ; Loh, K.P. ; Wee, A.T.S. 
815-Mar-2006Co growth on Si(0 0 1) and Si(1 1 1) surfaces: Interfacial interaction and growth dynamicsPan, J.S.; Liu, R.S. ; Zhang, Z.; Poon, S.W. ; Ong, W.J.; Tok, E.S. 
9Aug-2002Comment on "A new mechanism for reentrant behaviour in semiconductor epitaxy: A reflection high-energy electron diffraction study of the growth of GaAs(1 1 1)A thin films" [Surf. Sci. 459 (2000) 277-286]Tok, E.S. ; Neave, J.H.; Zhang, J.
102007Configuration dependent critical nuclei in the self assembly of magic clustersOng, W.J.; Tok, E.S. 
112006Decomposition of Si H3 to Si H2 on Si(100)- (2x1)Lim, F.C.H.; Tok, E.S. ; Kang, H.C. 
1212-Jun-2009Density functional theory study of Fe, Co, and Ni adatoms and dimers adsorbed on grapheneJohll, H.; Kang, H.C. ; Tok, E.S. 
1324-Jan-2013Desorption of ambient gas molecules and phase transformation of α-Fe2O3 nanostructures during ultrahigh vacuum annealingZhang, Z.; Lu, J.; Yun, T.; Zheng, M.; Pan, J. ; Sow, C.H. ; Tok, E.S. 
14Apr-2005Determination of local lattice tilt in Si1-xGex virtual substrate using high resolution channeling contrast microscopySeng, H.L. ; Osipowicz, T. ; Zhang, J.; Tok, E.S. ; Watt, F. 
152015Detrimental effects of oxygen vacancies in electrochromic molybdenum oxideBinayak Dasgupta; Ren Yi; Wong Lai Mun; Kong Lingyu; Tok Eng Soon ; Chim Wai Kin ; Chiam Sing Yang
162017Digital etch technique for forming ultra-scaled germanium-tin (Ge 1-x Sn x) fin structureWang, W ; Lei, D ; Dong, Y ; Gong, X ; Tok, E.S ; Yeo, Y.-C 
172014Direct laser micropatterning of GeSe2 nanostructures film with controlled optoelectrical propertiesMukherjee, B.; Murali, G.; Lim, S.X. ; Zheng, M.; Tok, E.S. ; Sow, C.H. 
182007Direct observation of carbon nanostructures growth using in-situ ultrahigh vacuum transmission electron microscopyFoo, Y.L.; Lin, M.; Tan, J.P.Y.; Boothroyd, C.B.; Tok, E.S. 
19Mar-2006Direct observation of single-walled carbon nanotube growth at the atomistic scaleLin, M.; Tan, J.P.Y.; Boothroyd, C.; Loh, K.P. ; Tok, E.S. ; Foo, Y.-L.
202009Disilane chemisorption on Six Ge1-x (100) - (2×1): Molecular mechanisms and implications for film growth ratesNg, R.Q.-M.; Tok, E.S. ; Kang, H.C.