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|Title:||Above-bandgap optical properties of biaxially strained GeSn alloys grown by molecular beam epitaxy||Authors:||Richard D'Costa, V.
Soon Tok, E.
|Issue Date:||13-Jan-2014||Citation:||Richard D'Costa, V., Wang, W., Zhou, Q., Soon Tok, E., Yeo, Y.-C. (2014-01-13). Above-bandgap optical properties of biaxially strained GeSn alloys grown by molecular beam epitaxy. Applied Physics Letters 104 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4862659||Abstract:||The complex dielectric function of biaxially strained Ge 1-xSnx (0 ≤ x ≤ 0.17) alloys grown on Ge (100) has been determined by spectroscopic ellipsometry from 1.2 to 4.7 eV. The effect of substitutional Sn incorporation and the epitaxial strain on the energy transitions E1, E1 + Δ1, E 0′, and E2 of GeSn alloys is investigated. Our results indicate that the strained GeSn alloys show Ge-like electronic bandstructure with all the transitions shifted downward due to the alloying of Sn. The strain dependence of E1 and E1 + Δ1 transitions is explained using the deformation potential theory, and values of -5.4 ± 0.4 eV and 3.8 ± 0.5 eV are obtained for the hydrostatic and shear deformation potentials, respectively. © 2014 AIP Publishing LLC.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/81926||ISSN:||00036951||DOI:||10.1063/1.4862659|
|Appears in Collections:||Staff Publications|
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