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Title: C60 on SiC nanomesh
Authors: Chen, W. 
Zhang, H.L. 
Xu, H. 
Tok, E.S. 
Loh, K.P. 
Wee, A.T.S. 
Issue Date: 2-Nov-2006
Citation: Chen, W., Zhang, H.L., Xu, H., Tok, E.S., Loh, K.P., Wee, A.T.S. (2006-11-02). C60 on SiC nanomesh. Journal of Physical Chemistry B 110 (43) : 21873-21881. ScholarBank@NUS Repository.
Abstract: A SiC nanomesh is used as a nanotemplate to direct the epitaxy of C 60 molecules. The epitaxial growth of C60 molecules on SiC nanomesh at room temperature is investigated by in situ scanning tunneling microscopy, revealing a typical Stranski-Krastanov mode (i.e., for the first one or two monolayers, it is a layer-by-layer growth or 2-D nucleation mode; at higher thicknesses, it changes to island growth or a 3-D nucleation mode). At submonolayer (0.04 and 0.2 ML) coverage, C60 molecules tend to aggregate to form single-layer C60 islands that mainly decorate terrace edges, leaving the uncovered SiC nanomesh almost free of C60 molecules. At 1 ML C60 coverage, a complete wetting layer of hexagonally close-packed C60 molecules forms on top of the SiC nanomesh. At higher coverage from 4.5 ML onward, the C60 stacking adopts a (111) oriented face-centered-cubic (fcc) structure. Strong bright and dim molecular contrasts have been observed on the first layer of C60 molecules, which are proposed to originate from electronic effects in a single-layer C60 island or the different coupling of C60 molecules to SiC nanomesh. These STM molecular contrast patterns completely disappear on the second and all the subsequent C60 layers. It is also found that the nanomesh can be fully recovered by annealing the C 60/SiC nanomesh sample at 200°C for 20 min. © 2006 American Chemical Society.
Source Title: Journal of Physical Chemistry B
ISSN: 15206106
DOI: 10.1021/jp0642241
Appears in Collections:Staff Publications

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