Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.susc.2006.01.029
DC FieldValue
dc.titleCo growth on Si(0 0 1) and Si(1 1 1) surfaces: Interfacial interaction and growth dynamics
dc.contributor.authorPan, J.S.
dc.contributor.authorLiu, R.S.
dc.contributor.authorZhang, Z.
dc.contributor.authorPoon, S.W.
dc.contributor.authorOng, W.J.
dc.contributor.authorTok, E.S.
dc.date.accessioned2014-12-12T07:10:11Z
dc.date.available2014-12-12T07:10:11Z
dc.date.issued2006-03-15
dc.identifier.citationPan, J.S., Liu, R.S., Zhang, Z., Poon, S.W., Ong, W.J., Tok, E.S. (2006-03-15). Co growth on Si(0 0 1) and Si(1 1 1) surfaces: Interfacial interaction and growth dynamics. Surface Science 600 (6) : 1308-1318. ScholarBank@NUS Repository. https://doi.org/10.1016/j.susc.2006.01.029
dc.identifier.issn00396028
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/115030
dc.description.abstractIn situ X-ray photoelectron spectroscopy (XPS) and ex situ atomic force microscopy (AFM) were used to study the growth of thin cobalt films at room temperature (RT) on both clean and H-terminated Si(0 0 1) and Si(1 1 1) surfaces. The growth proceeds by first forming an initial CoSi2-like phase at the growth front of the Si substrate. With increasing Co coverage the interfacial layer composition becomes richer in Co and eventually a metallic Co film is formed on top. Hydrogen termination of the Si surface did not suppress the reaction of Co and Si. A pseudo-layer-by-layer growth mode is proposed to describe the growth of Co on H-terminated Si surfaces, while closed-packed small island growth occurs on clean Si surfaces. The difference in growth mode can be attributed to the increase in the surface mobility of Co adatoms in the presence of hydrogen. © 2006 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.susc.2006.01.029
dc.sourceScopus
dc.subjectCobalt
dc.subjectCobalt silicide
dc.subjectGrowth mode
dc.subjectHydrogen termination
dc.subjectMetal-semiconductor interface
dc.subjectSilicon
dc.subjectSurface morphology
dc.subjectX-ray photoelectron spectroscopy
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentINSTITUTE OF ENGINEERING SCIENCE
dc.description.doi10.1016/j.susc.2006.01.029
dc.description.sourcetitleSurface Science
dc.description.volume600
dc.description.issue6
dc.description.page1308-1318
dc.description.codenSUSCA
dc.identifier.isiut000236455100019
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

33
checked on Aug 23, 2019

WEB OF SCIENCETM
Citations

32
checked on Aug 16, 2019

Page view(s)

83
checked on Aug 16, 2019

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.