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|Title:||Characterization of delta-doped B/Si multilayers by low-energy secondary ion mass spectrometry||Authors:||Liu, R.
|Issue Date:||Feb-2004||Citation:||Liu, R.,Wee, A.T.S.,Shen, D.H.,Takenaka, H. (2004-02). Characterization of delta-doped B/Si multilayers by low-energy secondary ion mass spectrometry. Surface and Interface Analysis 36 (2) : 172-176. ScholarBank@NUS Repository.||Abstract:||Achieving a high depth resolution (of the order of 1 nm) is critical in the semiconductor industry today, and various methods have been developed to optimize depth resolution. Well characterized reference materials are also important in accurate quantitative analysis of doping profiles. International Standard Organization (ISO)/Technique Commission (TC201)/Surface Chemical Analysis (SC6-SIMS) committees are engaged in the development of the international standardization of depth profiling of dopants in silicon using secondary ion mass spectrometry (SIMS). In this paper, the low-energy primary ion O2 + is employed in SIMS depth profiling of BN delta-doped Si samples grown by magnetron sputtering to achieve high depth resolution and minimize the surface roughening. The 11B+ and 30Si+ yields were monitored in the depth profiles. Profiling using a 0.5 keV energy O2 + beam is complicated by the early onset of surface roughening. The effects of oxygen flooding and sample rotation, used to suppress surface roughening, are also investigated. For analysis of the topography of the samples an atomic force microscope has been used. Copyright © 2004 John Wiley & Sons, Ltd.||Source Title:||Surface and Interface Analysis||URI:||http://scholarbank.nus.edu.sg/handle/10635/116251||ISSN:||01422421|
|Appears in Collections:||Staff Publications|
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