Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/113074
Title: Comparative study of Ta and TaN(N) in the barrier/ultra low k structures for deep submicron integrated circuits
Authors: Yang, L.Y.
Zhang, D.H.
Li, C.Y.
Liu, R. 
Wee, A.T.S. 
Foo, P.D.
Keywords: Ta(N) barrier
Thermal stability
Ultra low k
Issue Date: Aug-2004
Citation: Yang, L.Y.,Zhang, D.H.,Li, C.Y.,Liu, R.,Wee, A.T.S.,Foo, P.D. (2004-08). Comparative study of Ta and TaN(N) in the barrier/ultra low k structures for deep submicron integrated circuits. International Journal of Nanoscience 3 (4-5) : 471-479. ScholarBank@NUS Repository.
Abstract: Two kinds of barrier layers, Ta and TaN, deposited on an ultra low k dielectric porous polymer film with k = 2.3 were evaluated using various techniques after thermal treatments at 400°C for different periods of time. It was found that the sheet resistance of the Ta barrier increased significantly after being annealed for 60 min while that of TaN increased after 120 min due to Ta-O compound formation as revealed by X-ray diffraction and secondary ion mass spectrometry. The better integrity of the TaN compared Ta is due to N incorporation, which limits the diffusion of Ta and O. The diffusion coefficient of Ta in the porous polymer is 0.023 ± 0.001 nm 2/s, while the diffusion coefficient of TaN is only 0.0033 ± 0.0001 nm 2/s.
Source Title: International Journal of Nanoscience
URI: http://scholarbank.nus.edu.sg/handle/10635/113074
ISSN: 0219581X
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

66
checked on Jul 19, 2019

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.