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Liu Rong

rp00102

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Full Name
Liu Rong
(not current staff)
Variants
Rong, L.
LIU, R.S.L
Liu, R.
Liu, R.S.
 
Main Affiliation
 
Faculty
 
Email
phyliur@nus.edu.sg
 

Publications

Results 21-40 of 60 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
2127-Oct-2003Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structureHo, V.; Teo, L.W.; Choi, W.K. ; Chim, W.K. ; Tay, M.S.; Antoniadis, D.A.; Fitzgerald, E.A.; Du, A.Y.; Tung, C.H.; Liu, R. ; Wee, A.T.S. 
22Aug-2003Effects of first rapid thermal annealing temperature on Co silicide formationPeng, H.J.; Shen, Z.X. ; Lim, E.H.; Lai, C.W.; Liu, R. ; Wee, A.T.S. ; Sameer, A.; Dai, J.Y.; Zhang, B.C.; Zheng, J.Z.
232006Effects of O2 dissociation on a porous platinum coating in the thermal oxidation of GaAsHultquist, G.; Graham, M.J.; Wee, A.T.S. ; Liu, R. ; Sproule, G.I.; Dong, Q.; Anghel, C.
24Sep-2005GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layerCheah, W.K.; Fan, W.J.; Yoon, S.F.; Zhang, D.H.; Ng, B.K.; Loke, W.K.; Liu, R. ; Wee, A.T.S. 
2514-Feb-2002Growth mechanisms in thin film epitaxy of Si/SiGe from hydridesZhang, J.; Woods, N.J.; Breton, G.; Price, R.W.; Hartell, A.D.; Lau, G.S.; Liu, R. ; Wee, A.T.S. ; Tok, E.S. 
2615-Nov-2000Influence of annealing temperature on ferroelectric properties of SrBi2Ta2O9 thin films prepared by off-axis radio frequency magnetron sputteringTay, S.T.; Jiang, X.H.; Huan, C.H.A. ; Wee, A.T.S. ; Liu, R. 
27Jun-2002Infrared reflection investigation of ion-implanted and post-implantation-annealed epitaxially grown 6H-SiCChang, W.; Feng, Z.C. ; Lin, J. ; Liu, R. ; Wee, A.T.S. ; Tone, K.; Zhao, J.H.
2815-May-2006Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk GaAs1-xNx on GaAsCheah, W.K.; Fan, W.J.; Yoon, S.F.; Loke, W.K.; Liu, R. ; Wee, A.T.S. 
292006Interpretation of anomalous photoluminescence peak in GaAs 1-xNx grown by molecular beam epitaxyFan, W.J.; Cheah, W.K.; Yoon, S.F.; Zhang, D.H.; Liu, R. ; Wee, A.T.S. 
30Jan-2003Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profilingYeo, K.L.; Wee, A.T.S. ; Liu, R. ; Zhou, F.F.; See, A.
312002Investigation of metal-organic chemical vapor deposited copper diffusion in tantalum after annealingLoh, S.W.; Zhang, D.H.; Liu, R. ; Li, C.Y.; Wee, A.T.S. 
321-Mar-2005Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxyCheah, W.K.; Fan, W.J.; Yoon, S.F.; Ng, T.K.; Loke, W.K.; Zhang, D.H.; Mei, T.; Liu, R. ; Wee, A.T.S. 
3315-Jan-2003Low dielectric constant a-SiOC:H films as copper diffusion barrierKoh, Y.W.; Loh, K.P. ; Rong, L. ; Wee, A.T.S. ; Huang, L.; Sudijono, J.
34Nov-2003Nanostructure formation by O2 + ion sputtering of Si/SiGe heterostructuresLau, G.S.; Tok, E.S. ; Liu, R. ; Wee, A.T.S. ; Tjiu, W.C.; Zhang, J.
35Feb-2002Phase separation in Zn-doped InGaN grown by metalorganic chemical vapor depositionFeng, Z.C.; Yang, T.R.; Liu, R. ; Wee, T.S.A. 
36Aug-2006Probing Co/Si interface behaviour by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM)PAN, J.S.P; LIU, R.S.L ; TOK, E.S.T 
3710-Jun-2003Probing the behaviour of ultra thin Co layers on clean and hydrogen terminated Si(0 0 1) and Si(1 1 1) surfacesPan, J.S.; Tok, E.S. ; Huan, C.H.A. ; Liu, R.S. ; Chai, J.W.; Ong, W.J.; Toh, K.C.
389-May-2011Room temperature ferromagnetism in partially hydrogenated epitaxial grapheneXie, L.; Wang, X.; Lu, J.; Ni, Z.; Luo, Z.; Mao, H. ; Wang, R.; Wang, Y.; Huang, H. ; Qi, D. ; Liu, R. ; Yu, T.; Shen, Z.; Wu, T.; Peng, H.; Özyilmaz, B. ; Loh, K. ; Wee, A.T.S. ; Ariando ; Chen, W. 
19Jan-2004Roughening behavior in Si/SiGe heterostructures under O2 + bombardmentLau, G.S.; Tok, E.S. ; Liu, R. ; Wee, A.T.S. ; Zhang, J.
2028-Mar-2003Selective area growth of aligned carbon nanotubes by ion beam surface modificationGohel, A.; Chin, K.C. ; Lim, K.Y.; Tay, S.T.; Liu, R. ; Chen, G.S.; Wee, A.T.S.