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|Title:||GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer||Authors:||Cheah, W.K.
Molecular beam epitaxy (MBE)
|Issue Date:||Sep-2005||Citation:||Cheah, W.K., Fan, W.J., Yoon, S.F., Zhang, D.H., Ng, B.K., Loke, W.K., Liu, R., Wee, A.T.S. (2005-09). GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer. IEEE Photonics Technology Letters 17 (9) : 1932-1934. ScholarBank@NUS Repository. https://doi.org/10.1109/LPT.2005.851923||Abstract:||GaAs-based double-heterojunction p-i-n photodetectors using InzGa1-zAs1-x-yNx Sby in the i layer is fabricated for the first time using the solid source molecular beam epitaxy growth method. The surfactant effect generated by the presence of Sb in this material allows thick high-quality dilute nitride material growth. A peak responsivity of ∼0.29 A/W, corresponding to quantum efficiencies of 38% is attained between 0.9 and 1.1 μm from the best p-i-n device. The cutoff wavelength reaches ε11.4 μm and the dark current is ε10.43 mA/cm2 at a reverse bias of 2 V. A Sb-free p-i-n device consisting of InGaAsN-GaAs is also fabricated to compare the device performance with the InGaAsNSb-GaAs p-i-n devices. © 2005 IEEE.||Source Title:||IEEE Photonics Technology Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/116360||ISSN:||10411135||DOI:||10.1109/LPT.2005.851923|
|Appears in Collections:||Staff Publications|
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