Please use this identifier to cite or link to this item:
Title: Growth mechanisms in thin film epitaxy of Si/SiGe from hydrides
Authors: Zhang, J.
Woods, N.J.
Breton, G.
Price, R.W.
Hartell, A.D.
Lau, G.S.
Liu, R. 
Wee, A.T.S. 
Tok, E.S. 
Keywords: Epitaxial
Issue Date: 14-Feb-2002
Citation: Zhang, J., Woods, N.J., Breton, G., Price, R.W., Hartell, A.D., Lau, G.S., Liu, R., Wee, A.T.S., Tok, E.S. (2002-02-14). Growth mechanisms in thin film epitaxy of Si/SiGe from hydrides. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 89 (1-3) : 399-405. ScholarBank@NUS Repository.
Abstract: Epitaxial growth of Si/SiGe from hydride precursors has been well established as the preferred technique for preparation of 'virtual substrate' and active layers of heterojunction metal-oxide-semiconductor devices as well as other Si/SiGe heterojunction based device structures. This paper reviews briefly the role of hydrogen in the growth mechanisms and establishes the basic reaction pathways in the growth process. The surface related segregation of Ge and As are examined in the context of formation of sharp SiGe/Si heterojunctions and sharp doping profiles. The influence of the growth environment on these surface segregation processes are revealed by the extended rate equation based 'two-site' exchange model. The optimisation of growth conditions are clearly identified from the trend gathered from secondary ion mass spectrometry measurements. The strain relaxation process during the growth of virtual substrates often leads to bunching and a high density of threading dislocations and requires substantially thicker grading layers. Some preliminary work shows that incorporation of 'stresser' layers in the grading region substantially reduces these detrimental features enabling relatively thin grading layers to be used. © 2002 Elsevier Science B.V. All rights reserved.
Source Title: Materials Science and Engineering B: Solid-State Materials for Advanced Technology
ISSN: 09215107
DOI: 10.1016/S0921-5107(01)00842-X
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Feb 28, 2021


checked on Feb 19, 2021

Page view(s)

checked on Feb 27, 2021

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.