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https://doi.org/10.1063/1.2199976
Title: | Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk GaAs1-xNx on GaAs | Authors: | Cheah, W.K. Fan, W.J. Yoon, S.F. Loke, W.K. Liu, R. Wee, A.T.S. |
Issue Date: | 15-May-2006 | Citation: | Cheah, W.K., Fan, W.J., Yoon, S.F., Loke, W.K., Liu, R., Wee, A.T.S. (2006-05-15). Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk GaAs1-xNx on GaAs. Journal of Applied Physics 99 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2199976 | Abstract: | Low-temperature (10 K) photoluminescence measurements of Ga As1-x Nx epitaxial layers grown on GaAs reveal an anomalous second peak in solid-source molecular beam epitaxy. Rapid thermal annealing (RTA) of a specific GaAsN sample reveals a lower energy peak (γ) which redshifts and a higher energy peak (α) which blueshifts under increasing annealing temperature. The band-anticrossing model is used to identify the origins of the two peaks and we propose a model to explain the RTA observations by the concept of increased confinement in areas of higher N concentrations by trapped N localized states. The γ peak is due to the accumulation of N content near the GaAsGaAsN interface. Hence, this abnormal annealing behavior occurs in layers with nonuniform N concentration at the GaAsNGaAs interface. © 2006 American Institute of Physics. | Source Title: | Journal of Applied Physics | URI: | http://scholarbank.nus.edu.sg/handle/10635/116421 | ISSN: | 00218979 | DOI: | 10.1063/1.2199976 |
Appears in Collections: | Staff Publications |
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