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|Title:||Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk GaAs1-xNx on GaAs||Authors:||Cheah, W.K.
|Issue Date:||15-May-2006||Citation:||Cheah, W.K., Fan, W.J., Yoon, S.F., Loke, W.K., Liu, R., Wee, A.T.S. (2006-05-15). Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk GaAs1-xNx on GaAs. Journal of Applied Physics 99 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2199976||Abstract:||Low-temperature (10 K) photoluminescence measurements of Ga As1-x Nx epitaxial layers grown on GaAs reveal an anomalous second peak in solid-source molecular beam epitaxy. Rapid thermal annealing (RTA) of a specific GaAsN sample reveals a lower energy peak (γ) which redshifts and a higher energy peak (α) which blueshifts under increasing annealing temperature. The band-anticrossing model is used to identify the origins of the two peaks and we propose a model to explain the RTA observations by the concept of increased confinement in areas of higher N concentrations by trapped N localized states. The γ peak is due to the accumulation of N content near the GaAsGaAsN interface. Hence, this abnormal annealing behavior occurs in layers with nonuniform N concentration at the GaAsNGaAs interface. © 2006 American Institute of Physics.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/116421||ISSN:||00218979||DOI:||10.1063/1.2199976|
|Appears in Collections:||Staff Publications|
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