Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.1535925
Title: Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling
Authors: Yeo, K.L.
Wee, A.T.S. 
Liu, R. 
Zhou, F.F.
See, A.
Issue Date: Jan-2003
Citation: Yeo, K.L., Wee, A.T.S., Liu, R., Zhou, F.F., See, A. (2003-01). Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 21 (1 SPEC.) : 193-197. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1535925
Abstract: Secondary ion mass spectrometry (SIMS) was used to study boron penetration through different nitrided thin gate oxides. It was found that the reliability of nitrided thin gate oxide requires the nitrogen dose and nitridation process for an effective diffusion barrier to be optimized. As compared to conventional frontside SIMS depth profiling of an activated boron profile in a polysilicon gate stack using 0.5 keV O2 +, the backside depth profile showed a significant improvement in depth resolution and can give a more accurate quantification of boron penetration through the gate oxide. Using the "CsM+" technique, it was shown that nitrogen remains in the oxide layer, and the broadening observed in the nitrogen profiles using conventional SIMs is due to ion beam effects.
Source Title: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
URI: http://scholarbank.nus.edu.sg/handle/10635/113085
ISSN: 10711023
DOI: 10.1116/1.1535925
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