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|Title:||Interpretation of anomalous photoluminescence peak in GaAs 1-xNx grown by molecular beam epitaxy||Authors:||Fan, W.J.
|Issue Date:||2006||Citation:||Fan, W.J.,Cheah, W.K.,Yoon, S.F.,Zhang, D.H.,Liu, R.,Wee, A.T.S. (2006). Interpretation of anomalous photoluminescence peak in GaAs 1-xNx grown by molecular beam epitaxy. 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings 3 : 186-189. ScholarBank@NUS Repository.||Abstract:||Low-temperature (10K) photo luminescence (PL) measurements of GaAs 1-xNx epitaxial layers grown on GaAs by solid-source molecular beam epitaxy (SSMBE) reveal an anomalous second peak. Rapid thermal annealing (RTA) of a specific GaAsN sample reveals a lower energy peak (γ) which redshifts and a higher energy peak (α) which blueshifts when increasing annealing temperature. The band anticrossing model is used to identify the origins of the two peaks and we propose a model to explain the RTA observations by the concept of increased confinement in areas of higher N concentrations by trapped N localized states. The γ peak is due to the accumulation of N content near the GaAs/GaAsN interface.||Source Title:||2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/116744|
|Appears in Collections:||Staff Publications|
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