Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jcrysgro.2004.12.020
Title: Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy
Authors: Cheah, W.K.
Fan, W.J.
Yoon, S.F.
Ng, T.K.
Loke, W.K.
Zhang, D.H.
Mei, T.
Liu, R. 
Wee, A.T.S. 
Keywords: A1. High resolution X-ray diffraction
A1. Photoluminescence
A1. Secondary ion mass spectroscopy
A3. Molecular beam epitaxy
B1. GaAsN
B1. InGaAsN
Issue Date: 1-Mar-2005
Citation: Cheah, W.K., Fan, W.J., Yoon, S.F., Ng, T.K., Loke, W.K., Zhang, D.H., Mei, T., Liu, R., Wee, A.T.S. (2005-03-01). Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy. Journal of Crystal Growth 275 (3-4) : 440-447. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2004.12.020
Abstract: The indium and nitrogen incorporation in InGaAsN/InGaAs/GaAsN grown on GaAs substrates is investigated by means of photoluminescence (PL) and secondary ion mass spectroscopy (SIMS) measurements. The elemental profile and concentration collected from the two methods are then used as the simulation parameters to fit the X-ray diffractometry (XRD) measurements. The simulations indicate that the epitaxial parameters in our growth of InGaAsN/InGaAs/GaAsN epilayers are consistent throughout the three methods of analysis. © 2004 Elsevier B.V. All rights reserved.
Source Title: Journal of Crystal Growth
URI: http://scholarbank.nus.edu.sg/handle/10635/115159
ISSN: 00220248
DOI: 10.1016/j.jcrysgro.2004.12.020
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