Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jcrysgro.2004.12.020
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dc.titleInvestigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy
dc.contributor.authorCheah, W.K.
dc.contributor.authorFan, W.J.
dc.contributor.authorYoon, S.F.
dc.contributor.authorNg, T.K.
dc.contributor.authorLoke, W.K.
dc.contributor.authorZhang, D.H.
dc.contributor.authorMei, T.
dc.contributor.authorLiu, R.
dc.contributor.authorWee, A.T.S.
dc.date.accessioned2014-12-12T07:11:51Z
dc.date.available2014-12-12T07:11:51Z
dc.date.issued2005-03-01
dc.identifier.citationCheah, W.K., Fan, W.J., Yoon, S.F., Ng, T.K., Loke, W.K., Zhang, D.H., Mei, T., Liu, R., Wee, A.T.S. (2005-03-01). Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy. Journal of Crystal Growth 275 (3-4) : 440-447. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2004.12.020
dc.identifier.issn00220248
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/115159
dc.description.abstractThe indium and nitrogen incorporation in InGaAsN/InGaAs/GaAsN grown on GaAs substrates is investigated by means of photoluminescence (PL) and secondary ion mass spectroscopy (SIMS) measurements. The elemental profile and concentration collected from the two methods are then used as the simulation parameters to fit the X-ray diffractometry (XRD) measurements. The simulations indicate that the epitaxial parameters in our growth of InGaAsN/InGaAs/GaAsN epilayers are consistent throughout the three methods of analysis. © 2004 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.jcrysgro.2004.12.020
dc.sourceScopus
dc.subjectA1. High resolution X-ray diffraction
dc.subjectA1. Photoluminescence
dc.subjectA1. Secondary ion mass spectroscopy
dc.subjectA3. Molecular beam epitaxy
dc.subjectB1. GaAsN
dc.subjectB1. InGaAsN
dc.typeArticle
dc.contributor.departmentINSTITUTE OF ENGINEERING SCIENCE
dc.contributor.departmentPHYSICS
dc.description.doi10.1016/j.jcrysgro.2004.12.020
dc.description.sourcetitleJournal of Crystal Growth
dc.description.volume275
dc.description.issue3-4
dc.description.page440-447
dc.description.codenJCRGA
dc.identifier.isiut000228116800010
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