Please use this identifier to cite or link to this item:
Title: Probing the behaviour of ultra thin Co layers on clean and hydrogen terminated Si(0 0 1) and Si(1 1 1) surfaces
Authors: Pan, J.S.
Tok, E.S. 
Huan, C.H.A. 
Liu, R.S. 
Chai, J.W.
Ong, W.J.
Toh, K.C.
Keywords: Atomic force microscopy
Diffusion and migration
X-ray photoelectron spectroscopy
Issue Date: 10-Jun-2003
Citation: Pan, J.S., Tok, E.S., Huan, C.H.A., Liu, R.S., Chai, J.W., Ong, W.J., Toh, K.C. (2003-06-10). Probing the behaviour of ultra thin Co layers on clean and hydrogen terminated Si(0 0 1) and Si(1 1 1) surfaces. Surface Science 532-535 : 639-644. ScholarBank@NUS Repository.
Abstract: In situ X-ray photoelectron spectroscopy (XPS) reveals that deposited Co atoms at room temperature react with Si at the growth front to form a thin "CoSi2-like" layer on both clean and hydrogen passivated Si(0 0 1) and Si(1 1 1) surfaces. Improvement in the silicides crystallinity upon annealing was characterised by an appreciable decrease in the full width at half maximum of the Co 2p3/2 XPS spectra and a shift in binding energy towards Co in the bulk CoSi2 crystal structure. Unlike the Si(0 0 1) substrate, the presence of hydrogen on the Si(1 1 1) surface appears to delay the decrease in the peak area ratio of Co 2p3/2/Si 2p as annealing temperatures increase. Ex situ surface morphology imaged by atomic force microscopy suggests a reduced adatom mobility on the Co/H-passivated Si surface compared to the Co/clean Si surface, as evidenced by a higher and smaller size CoSi2 islands density observed on Co deposited/H-terminated Si surfaces after annealing to 700 °C. © 2003 Elsevier Science B.V. All rights reserved.
Source Title: Surface Science
ISSN: 00396028
DOI: 10.1016/S0039-6028(03)00149-3
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Mar 2, 2021


checked on Mar 2, 2021

Page view(s)

checked on Mar 6, 2021

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.