Please use this identifier to cite or link to this item: https://doi.org/10.1002/pssa.200406909
Title: Atomic force microscopy study of hexagonal boron nitride film growth on 6H-SiC (0001)
Authors: Chen, W. 
Loh, K.P. 
Lin, M.
Liu, R. 
Wee, A.T.S. 
Issue Date: Jan-2005
Citation: Chen, W., Loh, K.P., Lin, M., Liu, R., Wee, A.T.S. (2005-01). Atomic force microscopy study of hexagonal boron nitride film growth on 6H-SiC (0001). Physica Status Solidi (A) Applications and Materials Science 202 (1) : 37-45. ScholarBank@NUS Repository. https://doi.org/10.1002/pssa.200406909
Abstract: The growth of hexagonal Boron Nitride films (h-BN) on 6H-SiC (0001) using plasma-excited borazine has been studied. On 6H-SiC (0001), the growth of pin-hole free, compact h-BN film is difficult due to poor wetting properties between h-BN and 6H-SiC. The strained BN layer releases its elastic energy by a morphological instability at the interface. This strain relief mechanism gives rise to a buckling of the film into longitudinal islands and round trenches between 500-700°C. At 300 and 900°C however, the strained islands can attain their minimum-energy size to form homogeneously-sized spherical islands with diameter of ∼500 nm. Compositional analysis of the BN films grown at 900°C using XPS shows that these are actually BC xN film with x ∼ 0.15, whereas the films grown at 300°C have less carbon incorporation but higher O content. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Source Title: Physica Status Solidi (A) Applications and Materials Science
URI: http://scholarbank.nus.edu.sg/handle/10635/115599
ISSN: 18626300
DOI: 10.1002/pssa.200406909
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