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|Title:||Defects and surfactant action of antimony on GaAs and GaAs 1-xNxon GaAs  by molecular beam epitaxy||Authors:||Cheah, W.K.
|Issue Date:||2003||Citation:||Cheah, W.K.,Fan, W.J.,Yoon, S.F.,Wicaksono, S.,Liu, R.,Wee, A.T.S. (2003). Defects and surfactant action of antimony on GaAs and GaAs 1-xNxon GaAs  by molecular beam epitaxy. Materials Research Society Symposium - Proceedings 799 : 51-57. ScholarBank@NUS Repository.||Abstract:||Low temperature (4.5K) photoluminescence (PL) measurements of GaAs(N):Sb on GaAs grown by solid source molecular beam epitaxy (MBE) show a Sb-related defect peak at ∼1017nm (1.22eV). The magnitude of the Sb-related impurity PL peak corresponds in intensity with the prominence of the additional two-dimensional high-resolution x-ray diffraction (HRXRD) defect peaks. The elimination of these defects can be a measure of the improvement in crystal quality of GaAsN:Sb and a Sb flux ≥ 1.3×10-8 Torr is needed to invoke the surfactant behavior in III-V dilute nitride MBE growth for a growth rate of 1μm/hr.||Source Title:||Materials Research Society Symposium - Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/116059||ISSN:||02729172|
|Appears in Collections:||Staff Publications|
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