Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2005.07.076
Title: Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing
Authors: Zhao, J.
Chen, J.
Feng, Z.C.
Chen, J.L.
Liu, R. 
Xu, G.
Keywords: Dielectric cap
Impurity-free vacancy-enhanced intermixing
InGaP
InP
Molecular beam epitaxy
Optical properties
Quantum well
Rapid thermal annealing
SIMS
Issue Date: 1-Mar-2006
Citation: Zhao, J., Chen, J., Feng, Z.C., Chen, J.L., Liu, R., Xu, G. (2006-03-01). Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing. Thin Solid Films 498 (1-2) : 179-182. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.07.076
Abstract: Band gap blue shift of InGaAs/InP multiple quantum well (MQW) structures by impurity-free vacancy disordering (IFVD) is studied by photoluminescence (PL) and secondary ion mass spectrum (SIMS). SiO2, Si3N 4, and spin on glass (SOG) were used for the dielectric layers to create the vacancies. The results indicate that the band gap blue shift varies with the different dielectric layers and depends on the annealing temperature. The blue shift is also related to the combination of the layers between dielectric and cladding layers. The SIMS profile shows that the dielectric capped layer and rapid thermal annealing caused the quantum well intermixing, which results in the band gap blue shift. Optimum condition can be reached by choosing suitable dielectric layer and annealing condition. © 2005 Elsevier B.V. All rights reserved.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/115388
ISSN: 00406090
DOI: 10.1016/j.tsf.2005.07.076
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

8
checked on Jul 17, 2019

WEB OF SCIENCETM
Citations

9
checked on Jul 17, 2019

Page view(s)

74
checked on Jul 19, 2019

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.