Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2005.07.076
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dc.titleBand gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing
dc.contributor.authorZhao, J.
dc.contributor.authorChen, J.
dc.contributor.authorFeng, Z.C.
dc.contributor.authorChen, J.L.
dc.contributor.authorLiu, R.
dc.contributor.authorXu, G.
dc.date.accessioned2014-12-12T07:14:59Z
dc.date.available2014-12-12T07:14:59Z
dc.date.issued2006-03-01
dc.identifier.citationZhao, J., Chen, J., Feng, Z.C., Chen, J.L., Liu, R., Xu, G. (2006-03-01). Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing. Thin Solid Films 498 (1-2) : 179-182. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.07.076
dc.identifier.issn00406090
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/115388
dc.description.abstractBand gap blue shift of InGaAs/InP multiple quantum well (MQW) structures by impurity-free vacancy disordering (IFVD) is studied by photoluminescence (PL) and secondary ion mass spectrum (SIMS). SiO2, Si3N 4, and spin on glass (SOG) were used for the dielectric layers to create the vacancies. The results indicate that the band gap blue shift varies with the different dielectric layers and depends on the annealing temperature. The blue shift is also related to the combination of the layers between dielectric and cladding layers. The SIMS profile shows that the dielectric capped layer and rapid thermal annealing caused the quantum well intermixing, which results in the band gap blue shift. Optimum condition can be reached by choosing suitable dielectric layer and annealing condition. © 2005 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.tsf.2005.07.076
dc.sourceScopus
dc.subjectDielectric cap
dc.subjectImpurity-free vacancy-enhanced intermixing
dc.subjectInGaP
dc.subjectInP
dc.subjectMolecular beam epitaxy
dc.subjectOptical properties
dc.subjectQuantum well
dc.subjectRapid thermal annealing
dc.subjectSIMS
dc.typeConference Paper
dc.contributor.departmentINSTITUTE OF ENGINEERING SCIENCE
dc.description.doi10.1016/j.tsf.2005.07.076
dc.description.sourcetitleThin Solid Films
dc.description.volume498
dc.description.issue1-2
dc.description.page179-182
dc.description.codenTHSFA
dc.identifier.isiut000235270500035
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