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|Title:||Co-doping carbon tetrabromide (CBr4) and antimony (Sb) on GaAs [1 0 0] in solid source molecular beam epitaxy||Authors:||Cheah, W.K.
A1. Secondary ion mass spectrometry
A1. X-ray diffraction
A3. Molecular beam epitaxy
|Issue Date:||15-Jun-2004||Citation:||Cheah, W.K., Fan, W.J., Yoon, S.F., Liu, R., Wee, A.T.S. (2004-06-15). Co-doping carbon tetrabromide (CBr4) and antimony (Sb) on GaAs [1 0 0] in solid source molecular beam epitaxy. Journal of Crystal Growth 267 (1-2) : 364-371. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2004.03.057||Abstract:||The surfactant effects of antimony enhances the carbon (C) dopant incorporation into substitutional sites in GaAsSb:C grown by solid source molecular beam epitaxy. A hole mobility greater than 50cm2/Vs for doping levels over 9 × 1019cm-3 was achieved using a solid CBr4 source. 5.4 × 10-8Torr of carbon flux giving a hole concentration of ∼7 × 1019cm-3 in GaAs, reaches beyond 9 × 1019cm-3 with the addition of ∼4 × 10-8Torr of Sb. With increasing Sb doping concentration, the rate of C incorporation into substitutional sites increases, the photoluminescence characteristics are improved and the net hole concentration increases due to the reduction of interstitial carbon. However when Sb doping is increased further, gallium vacancies and GaSb antisites could create point defects, causing epitaxial degradation. © 2004 Elsevier B.V. All rights reserved.||Source Title:||Journal of Crystal Growth||URI:||http://scholarbank.nus.edu.sg/handle/10635/115649||ISSN:||00220248||DOI:||10.1016/j.jcrysgro.2004.03.057|
|Appears in Collections:||Staff Publications|
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