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|Title:||Crystalline phase separation of InGaN layer materials prepared by metalorganic chemical vapor deposition||Authors:||Feng, Z.C.
|Issue Date:||20-Jan-2002||Citation:||Feng, Z.C.,Yang, T.R.,Liu, R.,Wee, A.T.S. (2002-01-20). Crystalline phase separation of InGaN layer materials prepared by metalorganic chemical vapor deposition. International Journal of Modern Physics B 16 (1-2) : 268-274. ScholarBank@NUS Repository.||Abstract:||Zn-doped InGaN thin films were epitaxied on the top of 1-2 micron thick GaN grown on sapphire by metal organic chemical vapor deposition, and studied by a combination of high resolution X-ray diffraction (HR-XRD), micro-photoluminescence (PL) and secondary ion mass spectrometry (SIMS). HRXRD exhibits a GaN band and a single band from InGaN for samples without phase separation, but two or more InGaN bands corresponding to different x(In) for samples with phase separation. PL emissions from InGaN spread over a wider energy ranges and were modulated by the interference effects. Excitation power dependence measurements reveal 2-sets of PL emissions for samples with phase separation, but only 1-set for samples without phase separation. SIMS data showed that phase separated InGaN:Zn films possess a high Zn concentration near the InGaN-GaN interface and non-uniform distributions of In and Zn contents, which are in contrast with data from InGaN:Zn films with no In-phase separation. These interesting results are correlated to the growth process and microstructural properties.||Source Title:||International Journal of Modern Physics B||URI:||http://scholarbank.nus.edu.sg/handle/10635/113111||ISSN:||02179792|
|Appears in Collections:||Staff Publications|
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