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Title: Crystalline phase separation of InGaN layer materials prepared by metalorganic chemical vapor deposition
Authors: Feng, Z.C.
Yang, T.R.
Liu, R. 
Wee, A.T.S. 
Issue Date: 20-Jan-2002
Citation: Feng, Z.C.,Yang, T.R.,Liu, R.,Wee, A.T.S. (2002-01-20). Crystalline phase separation of InGaN layer materials prepared by metalorganic chemical vapor deposition. International Journal of Modern Physics B 16 (1-2) : 268-274. ScholarBank@NUS Repository.
Abstract: Zn-doped InGaN thin films were epitaxied on the top of 1-2 micron thick GaN grown on sapphire by metal organic chemical vapor deposition, and studied by a combination of high resolution X-ray diffraction (HR-XRD), micro-photoluminescence (PL) and secondary ion mass spectrometry (SIMS). HRXRD exhibits a GaN band and a single band from InGaN for samples without phase separation, but two or more InGaN bands corresponding to different x(In) for samples with phase separation. PL emissions from InGaN spread over a wider energy ranges and were modulated by the interference effects. Excitation power dependence measurements reveal 2-sets of PL emissions for samples with phase separation, but only 1-set for samples without phase separation. SIMS data showed that phase separated InGaN:Zn films possess a high Zn concentration near the InGaN-GaN interface and non-uniform distributions of In and Zn contents, which are in contrast with data from InGaN:Zn films with no In-phase separation. These interesting results are correlated to the growth process and microstructural properties.
Source Title: International Journal of Modern Physics B
ISSN: 02179792
Appears in Collections:Staff Publications

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