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Title: Comparative investigation of TaN and SiCN barrier layer for Cu/ultra low k integration
Authors: Yang, L.Y.
Zhang, D.H.
Li, C.Y.
Liu, R. 
Lu, P.W.
Foo, P.D.
Wee, A.T.S. 
Keywords: Cu metallization
Ultra low k polymer
Issue Date: 10-May-2006
Citation: Yang, L.Y., Zhang, D.H., Li, C.Y., Liu, R., Lu, P.W., Foo, P.D., Wee, A.T.S. (2006-05-10). Comparative investigation of TaN and SiCN barrier layer for Cu/ultra low k integration. Thin Solid Films 504 (1-2) : 265-268. ScholarBank@NUS Repository.
Abstract: This paper reports comparative studies of TaN and SiCN as barrier for Cu-porous dielectric (k < 2.3) integration using various techniques. It was found that SiCN dielectric is much better than TaN for the Cu-Ultra low k (ULK) integration. Upon thermal annealing at 400 °C for different periods of time, TEM images revealed strong intermixing at the two interfaces of Cu/TaN/ULK structures but no sign of diffusion in Cu/SiCN/ULK structure even after being annealed at 400 °C for 150 min. The strong intermixing in the Cu/TaN/ULK structure results from grain boundaries in the TaN film and porosity of the dielectric, while the excellent reliability of the Cu/SiCN/ULK dielectric is ascribed to the amorphous structure and high thermal stability of the SiCN film.
Source Title: Thin Solid Films
ISSN: 00406090
DOI: 10.1016/j.tsf.2005.09.166
Appears in Collections:Staff Publications

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