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|Title:||Comparative investigation of TaN and SiCN barrier layer for Cu/ultra low k integration||Authors:||Yang, L.Y.
Ultra low k polymer
|Issue Date:||10-May-2006||Citation:||Yang, L.Y., Zhang, D.H., Li, C.Y., Liu, R., Lu, P.W., Foo, P.D., Wee, A.T.S. (2006-05-10). Comparative investigation of TaN and SiCN barrier layer for Cu/ultra low k integration. Thin Solid Films 504 (1-2) : 265-268. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.09.166||Abstract:||This paper reports comparative studies of TaN and SiCN as barrier for Cu-porous dielectric (k < 2.3) integration using various techniques. It was found that SiCN dielectric is much better than TaN for the Cu-Ultra low k (ULK) integration. Upon thermal annealing at 400 °C for different periods of time, TEM images revealed strong intermixing at the two interfaces of Cu/TaN/ULK structures but no sign of diffusion in Cu/SiCN/ULK structure even after being annealed at 400 °C for 150 min. The strong intermixing in the Cu/TaN/ULK structure results from grain boundaries in the TaN film and porosity of the dielectric, while the excellent reliability of the Cu/SiCN/ULK dielectric is ascribed to the amorphous structure and high thermal stability of the SiCN film.||Source Title:||Thin Solid Films||URI:||http://scholarbank.nus.edu.sg/handle/10635/113110||ISSN:||00406090||DOI:||10.1016/j.tsf.2005.09.166|
|Appears in Collections:||Staff Publications|
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