Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1483913
Title: Comparison of nitrogen compositions in the as-grown GaNxAs 1-x on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy
Authors: Fan, W.J.
Yoon, S.F.
Ng, T.K.
Wang, S.Z.
Loke, W.K.
Liu, R. 
Wee, A. 
Issue Date: 3-Jun-2002
Citation: Fan, W.J., Yoon, S.F., Ng, T.K., Wang, S.Z., Loke, W.K., Liu, R., Wee, A. (2002-06-03). Comparison of nitrogen compositions in the as-grown GaNxAs 1-x on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy. Applied Physics Letters 80 (22) : 4136-4138. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1483913
Abstract: High-resolution x-ray diffraction (HRXRD) and secondary-ion mass spectroscopy were used to measure the N compositions of a series of as-grown GaNAs samples grown by solid-source molecular-beam epitaxy. We found that N compositions measured by the two methods agree well at lower N compositions (x3%). The HRXRD measurement by using Vegard's law to extract the lattice constant of GaNAs, underestimates N composition at larger N compositions. We found that the underestimation is up to 14.3% at the x=4.2%. In order to explain the deviation, a model for analyzing the correlation between lattice parameters and point defects in the epilayer was carried out. © 2002 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/116955
ISSN: 00036951
DOI: 10.1063/1.1483913
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