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|Title:||An XPS study of silicon oxynitride rapid thermally grown in nitric oxide||Authors:||Lai, W.H.
|Issue Date:||2000||Citation:||Lai, W.H.,Li, M.F.,Pan, J.S.,Liu, R.,Chan, L.,Chua, T.C. (2000). An XPS study of silicon oxynitride rapid thermally grown in nitric oxide. Materials Research Society Symposium - Proceedings 592 : 171-176. ScholarBank@NUS Repository.||Abstract:||Earlier growth studies on the rapid thermal oxidation of silicon in NO (RTNO) were not sufficiently comprehensive and were limited by temperature measurement uncertainty and thermal non-uniformity across the wafer. Using a state-of-the-art rapid thermal processing (RTP) system, the RTNO growth characteristics at 100 and 760 Torr, from 900 to 1200°C and from 0 to 480 s were investigated. It was found that the initial growth rate anomalously decreased with temperature and pressure. These anomalies were correlated to the evolution of the XPS N 1s spectrum of the RTNO film with oxidation time, temperature and pressure. © 2000 Materials Research Society.||Source Title:||Materials Research Society Symposium - Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/61817||ISSN:||02729172|
|Appears in Collections:||Staff Publications|
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