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|Title:||Surface smoothing of floating gates in flash memory devices via surface nitrogen and carbon incorporation||Authors:||Cha, C.-L.
|Issue Date:||19-Jul-1999||Citation:||Cha, C.-L.,Chor, E.-F.,Gong, H.,Bourdillon, A.J.,Jia, Y.-M.,Pan, J.-S.,Zhang, A.-Q.,Chan, L. (1999-07-19). Surface smoothing of floating gates in flash memory devices via surface nitrogen and carbon incorporation. Applied Physics Letters 75 (3) : 355-357. ScholarBank@NUS Repository.||Abstract:||The effectiveness of low-energy N2 + or Ar+ surface implantation in the control of surface nucleation and surface smoothing of floating gates (polysilicon) in flash memory devices was investigated. The amount of surface SiNy and SiC formed is just adequate to generate an optimum number of nucleation centers to promote the growth of small surface grains during thermal processing.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/81235||ISSN:||00036951|
|Appears in Collections:||Staff Publications|
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