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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/81235
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dc.titleSurface smoothing of floating gates in flash memory devices via surface nitrogen and carbon incorporation
dc.contributor.authorCha, C.-L.
dc.contributor.authorChor, E.-F.
dc.contributor.authorGong, H.
dc.contributor.authorBourdillon, A.J.
dc.contributor.authorJia, Y.-M.
dc.contributor.authorPan, J.-S.
dc.contributor.authorZhang, A.-Q.
dc.contributor.authorChan, L.
dc.date.accessioned2014-10-07T03:06:08Z
dc.date.available2014-10-07T03:06:08Z
dc.date.issued1999-07-19
dc.identifier.citationCha, C.-L.,Chor, E.-F.,Gong, H.,Bourdillon, A.J.,Jia, Y.-M.,Pan, J.-S.,Zhang, A.-Q.,Chan, L. (1999-07-19). Surface smoothing of floating gates in flash memory devices via surface nitrogen and carbon incorporation. Applied Physics Letters 75 (3) : 355-357. ScholarBank@NUS Repository.
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81235
dc.description.abstractThe effectiveness of low-energy N2 + or Ar+ surface implantation in the control of surface nucleation and surface smoothing of floating gates (polysilicon) in flash memory devices was investigated. The amount of surface SiNy and SiC formed is just adequate to generate an optimum number of nucleation centers to promote the growth of small surface grains during thermal processing.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE
dc.contributor.departmentINST OF MATERIALS RESEARCH & ENGINEERING
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleApplied Physics Letters
dc.description.volume75
dc.description.issue3
dc.description.page355-357
dc.description.codenAPPLA
dc.identifier.isiutNOT_IN_WOS
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