Please use this identifier to cite or link to this item:
|Title:||ARXPS analysis of surface compositional change in Ar+ ion bombarded GaAs (100)||Authors:||Pan, J.S.
|Issue Date:||21-Sep-1997||Citation:||Pan, J.S., Wee, A.T.S., Huan, C.H.A., Tan, H.S., Tan, K.L. (1997-09-21). ARXPS analysis of surface compositional change in Ar+ ion bombarded GaAs (100). Journal of Physics D: Applied Physics 30 (18) : 2514-2519. ScholarBank@NUS Repository. https://doi.org/10.1088/0022-3727/30/18/004||Abstract:||Angle-resolved x-ray photoelectron spectroscopy (ARXPS) has been used to study surface compositional changes in GaAs (100) as a consequence of 1 to 5 keV Ar+ ion bombardment. Prior to Ar+ ion bombardment, the ARXPS measurements showed that neglecting surface contamination, the composition of the GaAs surface was close to its stoichiometric value of 1:1. After Ar+ ion bombardment, the oxide layer was efficiently removed. At steady state the altered layers induced by 1-5 keV Ar+ ion bombardment were, on average, Ga-rich up to the sampling depth of the ARXPS technique. The ARXPS measurements also showed that the depth profile of the altered layer was a function of Ar+ ion energy. The altered layer induced by 1 keV Ar+ ion bombardment was inhomogeneous as a function of depth and appeared richer in Ga on the surface than in the subsurface region, that by 3 keV Ar+ ion bombardment was homogeneous and that by 5 keV Ar+ ion bombardment was less Ga-rich on the surface than in the subsurface region. The results are discussed in the context of preferential sputtering, radiation-enhanced diffusion/segregation, and altered layer thickness dependence on Ar+ ion energy.||Source Title:||Journal of Physics D: Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/113227||ISSN:||00223727||DOI:||10.1088/0022-3727/30/18/004|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.