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Tan Hock Siew

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Full Name
Tan Hock Siew
Variants
Tan, H.S.
Tan, H.-S.
Tan, H.
 
Main Affiliation
 
Faculty
 

Publications

Results 1-20 of 27 (Search time: 0.008 seconds).

Issue DateTitleAuthor(s)
1Apr-1990A.c. electrical behaviour of cobaltcomplex-doped polyimide filmsKhor, E. ; Tan, H.S. ; Ng, S.C. ; Li, H.C.
21987Accurate measurement of the transmission coefficient of constricted pipesTang, S.H. ; Tan, H.S. 
31-Jun-1997AES analysis of nitridation of Si(100) by 2-10 keV N+ 2 ion beamsPan, J.S. ; Wee, A.T.S. ; Huan, C.H.A. ; Tan, H.S. ; Tan, K.L. 
4Dec-1996AES analysis of silicon nitride formation by 10 keV N+ and N+ 2 ion implantationPan, J.S. ; Wee, A.T.S. ; Huan, C.H.A. ; Tan, H.S. ; Tan, K.L. 
515-Mar-1996Argon incorporation and silicon carbide formation during low energy argon-ion bombardment of Si(100)Pan, J.S. ; Wee, A.T.S. ; Huan, C.H.A. ; Tan, H.S. ; Tan, K.L. 
615-Dec-1996Argon incorporation and surface compositional changes in InP(100) due to low-energy Ar+ ion bombardmentPan, J.S. ; Wee, A.T.S. ; Huan, C.H.A. ; Tan, H.S. ; Tan, K.L. 
721-Sep-1997ARXPS analysis of surface compositional change in Ar+ ion bombarded GaAs (100)Pan, J.S. ; Wee, A.T.S. ; Huan, C.H.A. ; Tan, H.S. ; Tan, K.L. 
8Jul-1998Auger electron spectroscopy and x-ray photoelectron spectroscopy analysis of angle of incidence effects of ion beam nitridation of GaAsPan, J.S. ; Huan, C.H.A. ; Wee, A.T.S. ; Tan, H.S. ; Tan, K.L. 
9Jul-1996Charge-state effects of deep centres in semiconductors on non-radiative capture of carriers by multiphonon processesKang, Y.Q.; Zheng, J.H.; Tan, H.S. ; Ng, S.C. 
10Mar-1988COMPUTER CONTROLLED SYSTEM FOR TRANSIENT CAPACITANCE MEASUREMENTS OF DEEP LEVELS IN SEMICONDUCTOR.Woon, H.S.; Tan, H.S. ; Ng, S.C. 
11Sep-1994Copper as an electron trap in GaAs0.6P0.4Tan, H.S. ; Han, M.K. ; Hu, P.Y.; Zheng, J.H.; Ng, S.C. ; Gong, H. 
1217-Mar-2000Correlation between reduced glass transition temperature and glass forming ability of bulk metallic glassesLu, Z.P. ; Tan, H. ; Li, Y. ; Ng, S.C. 
13Apr-1993Easy and accurate method to determine simultaneously the free energy level and the capture cross section of a trap centreTan, H.S. ; Han, M.K. ; Ng, S.C. 
141988Estimation of maximum growth rates of undercooled silicon melt on (111) and (100) surfacesTan, A.K. ; Ong, C.K. ; Tan, H.S. 
1526-Apr-2007Exact solutions of a nonpolynomially nonlinear Schrödinger equationParwani, R. ; Tan, H.S. 
161995Low threshold ZnSe1-xTex optical limitersJi, W. ; Tan, H.S. ; Feng, Z.C. ; Becla, P.
173-Apr-1993Measurement of phosphorus content in silica layersLoh, K.K. ; Sow, C.H. ; Tan, K.H. ; Tan, H.S. ; Tang, S.M. ; Orlic, I. ; Osipowicz, T. 
18Jan-1988MONTE CARLO SIMULATION OF CRYSTAL GROWTH FROM SILICON MELT.Tan, A.K. ; Ong, C.K. ; Tan, H.S. 
192003Multi-black-hole solutions in five dimensionsTan, H.S. ; Teo, E. 
201991Optical absorption measurements of band-gap shrinkage in moderately and heavily doped siliconAw, S.E.; Tan, H.S. ; Ong, C.K.