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Title: Estimation of maximum growth rates of undercooled silicon melt on (111) and (100) surfaces
Authors: Tan, A.K. 
Ong, C.K. 
Tan, H.S. 
Issue Date: 1988
Citation: Tan, A.K., Ong, C.K., Tan, H.S. (1988). Estimation of maximum growth rates of undercooled silicon melt on (111) and (100) surfaces. Semiconductor Science and Technology 3 (6) : 525-528. ScholarBank@NUS Repository.
Abstract: Monte Carlo simulation data are used to study the behaviour of the melt growth from undercooled melt at different temperatures for both Si(111) and Si(100) surface. The dependence of the melt growth rate on the crystal orientation is demonstrated. In both cases, the authors find that the growth rate increases with the degree of undercooling until a diffusivity limited maximum is reached. The estimated maximum growth rates are 6.5 m s-1 and 14.5 m s-1 for stable single crystal at about 200 and 110 K of undercooling for Si(111) and Si(100) surfaces respectively. The results are in line with the experimental results measured by Cullis et al. (1984).
Source Title: Semiconductor Science and Technology
ISSN: 02681242
DOI: 10.1088/0268-1242/3/6/002
Appears in Collections:Staff Publications

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