Estimation of maximum growth rates of undercooled silicon melt on (111) and (100) surfaces

Abstract

Monte Carlo simulation data are used to study the behaviour of the melt growth from undercooled melt at different temperatures for both Si(111) and Si(100) surface. The dependence of the melt growth rate on the crystal orientation is demonstrated. In both cases, the authors find that the growth rate increases with the degree of undercooling until a diffusivity limited maximum is reached. The estimated maximum growth rates are 6.5 m s-1 and 14.5 m s-1 for stable single crystal at about 200 and 110 K of undercooling for Si(111) and Si(100) surfaces respectively. The results are in line with the experimental results measured by Cullis et al. (1984).