Please use this identifier to cite or link to this item: https://doi.org/10.1088/0268-1242/3/6/002
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dc.titleEstimation of maximum growth rates of undercooled silicon melt on (111) and (100) surfaces
dc.contributor.authorTan, A.K.
dc.contributor.authorOng, C.K.
dc.contributor.authorTan, H.S.
dc.date.accessioned2014-10-16T09:24:24Z
dc.date.available2014-10-16T09:24:24Z
dc.date.issued1988
dc.identifier.citationTan, A.K., Ong, C.K., Tan, H.S. (1988). Estimation of maximum growth rates of undercooled silicon melt on (111) and (100) surfaces. Semiconductor Science and Technology 3 (6) : 525-528. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/3/6/002
dc.identifier.issn02681242
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96521
dc.description.abstractMonte Carlo simulation data are used to study the behaviour of the melt growth from undercooled melt at different temperatures for both Si(111) and Si(100) surface. The dependence of the melt growth rate on the crystal orientation is demonstrated. In both cases, the authors find that the growth rate increases with the degree of undercooling until a diffusivity limited maximum is reached. The estimated maximum growth rates are 6.5 m s-1 and 14.5 m s-1 for stable single crystal at about 200 and 110 K of undercooling for Si(111) and Si(100) surfaces respectively. The results are in line with the experimental results measured by Cullis et al. (1984).
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1088/0268-1242/3/6/002
dc.description.sourcetitleSemiconductor Science and Technology
dc.description.volume3
dc.description.issue6
dc.description.page525-528
dc.identifier.isiutA1988N855500002
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