Please use this identifier to cite or link to this item: https://doi.org/10.1088/0268-1242/3/6/002
Title: Estimation of maximum growth rates of undercooled silicon melt on (111) and (100) surfaces
Authors: Tan, A.K. 
Ong, C.K. 
Tan, H.S. 
Issue Date: 1988
Citation: Tan, A.K., Ong, C.K., Tan, H.S. (1988). Estimation of maximum growth rates of undercooled silicon melt on (111) and (100) surfaces. Semiconductor Science and Technology 3 (6) : 525-528. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/3/6/002
Abstract: Monte Carlo simulation data are used to study the behaviour of the melt growth from undercooled melt at different temperatures for both Si(111) and Si(100) surface. The dependence of the melt growth rate on the crystal orientation is demonstrated. In both cases, the authors find that the growth rate increases with the degree of undercooling until a diffusivity limited maximum is reached. The estimated maximum growth rates are 6.5 m s-1 and 14.5 m s-1 for stable single crystal at about 200 and 110 K of undercooling for Si(111) and Si(100) surfaces respectively. The results are in line with the experimental results measured by Cullis et al. (1984).
Source Title: Semiconductor Science and Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/96521
ISSN: 02681242
DOI: 10.1088/0268-1242/3/6/002
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