Please use this identifier to cite or link to this item:
|Title:||Copper as an electron trap in GaAs0.6P0.4||Authors:||Tan, H.S.
|Issue Date:||Sep-1994||Citation:||Tan, H.S.,Han, M.K.,Hu, P.Y.,Zheng, J.H.,Ng, S.C.,Gong, H. (1994-09). Copper as an electron trap in GaAs0.6P0.4. Applied Physics A: Solids and Surfaces 59 (3) : 245-251. ScholarBank@NUS Repository.||Abstract:||An electron trap having an energy level of 0.14 eV from the conduction band edge was found in the bulk of copper-diffused VPE-grown n-GaAs0.6P0.4 by conventional DLTS measurements and by pulse-duration dependent capacitance amplitude measurements. The capture cross section at room temperature is about 1.0 × 10-21 cm2 and has a weak temperature dependence. These properties are attributed to a non-repulsive center having a capturing mechanism which involves multiphonon emission processes with hardly any lattice relaxation. Evolution of the spatial distributions of the traps with time under junction electric field were studied. The results suggest that the trap is positively charged and has a high diffusivity under electric field. The center can thus be identified as positively charged interstitial copper ion rather than some form of copper complexes.||Source Title:||Applied Physics A: Solids and Surfaces||URI:||http://scholarbank.nus.edu.sg/handle/10635/96106||ISSN:||07217250|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 29, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.