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Title: | Charge-state effects of deep centres in semiconductors on non-radiative capture of carriers by multiphonon processes | Authors: | Kang, Y.Q. Zheng, J.H. Tan, H.S. Ng, S.C. |
Issue Date: | Jul-1996 | Citation: | Kang, Y.Q.,Zheng, J.H.,Tan, H.S.,Ng, S.C. (1996-07). Charge-state effects of deep centres in semiconductors on non-radiative capture of carriers by multiphonon processes. Applied Physics A: Materials Science and Processing 63 (1) : 37-43. ScholarBank@NUS Repository. | Abstract: | A set of simplified analytical expressions for carrier capture coefficients, including quantatively the charge-dependent effect, have been obtained for easy physical examination and comparison with experiments. The temperature-related charge-state-dependent factor F(T) thus calculated could be used to present more accurately the nature and magnitude of the charge state of a trap centre. The ranges of values of F(T) valid for attractive, repulsive and neutral centres are also obtained. In addition, we show that the thermal ionization energy for the B centre in GaAs is a function of temperature. The importance of the data of capture cross-section at low temperatures in determining the charge state and characteristic of a deep centre is also manifested. Both the absolute magnitude and the temperature-dependent behaviour of the calculated capture cross-section are well-supported by the very good fits to the experimental electron cross-sections for A and B centres in GaAs reported by Lang [7] and Wang et al. [22] and for Cu centre in Ge reported by Zhdanova and Kalashnikov [23]. | Source Title: | Applied Physics A: Materials Science and Processing | URI: | http://scholarbank.nus.edu.sg/handle/10635/95982 | ISSN: | 09478396 |
Appears in Collections: | Staff Publications |
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