Please use this identifier to cite or link to this item: https://doi.org/10.1088/0022-3727/30/18/004
DC FieldValue
dc.titleARXPS analysis of surface compositional change in Ar+ ion bombarded GaAs (100)
dc.contributor.authorPan, J.S.
dc.contributor.authorWee, A.T.S.
dc.contributor.authorHuan, C.H.A.
dc.contributor.authorTan, H.S.
dc.contributor.authorTan, K.L.
dc.date.accessioned2014-11-30T06:41:10Z
dc.date.available2014-11-30T06:41:10Z
dc.date.issued1997-09-21
dc.identifier.citationPan, J.S., Wee, A.T.S., Huan, C.H.A., Tan, H.S., Tan, K.L. (1997-09-21). ARXPS analysis of surface compositional change in Ar+ ion bombarded GaAs (100). Journal of Physics D: Applied Physics 30 (18) : 2514-2519. ScholarBank@NUS Repository. https://doi.org/10.1088/0022-3727/30/18/004
dc.identifier.issn00223727
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/113227
dc.description.abstractAngle-resolved x-ray photoelectron spectroscopy (ARXPS) has been used to study surface compositional changes in GaAs (100) as a consequence of 1 to 5 keV Ar+ ion bombardment. Prior to Ar+ ion bombardment, the ARXPS measurements showed that neglecting surface contamination, the composition of the GaAs surface was close to its stoichiometric value of 1:1. After Ar+ ion bombardment, the oxide layer was efficiently removed. At steady state the altered layers induced by 1-5 keV Ar+ ion bombardment were, on average, Ga-rich up to the sampling depth of the ARXPS technique. The ARXPS measurements also showed that the depth profile of the altered layer was a function of Ar+ ion energy. The altered layer induced by 1 keV Ar+ ion bombardment was inhomogeneous as a function of depth and appeared richer in Ga on the surface than in the subsurface region, that by 3 keV Ar+ ion bombardment was homogeneous and that by 5 keV Ar+ ion bombardment was less Ga-rich on the surface than in the subsurface region. The results are discussed in the context of preferential sputtering, radiation-enhanced diffusion/segregation, and altered layer thickness dependence on Ar+ ion energy.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentINST OF MATERIALS RESEARCH & ENGINEERING
dc.contributor.departmentPHYSICS
dc.description.doi10.1088/0022-3727/30/18/004
dc.description.sourcetitleJournal of Physics D: Applied Physics
dc.description.volume30
dc.description.issue18
dc.description.page2514-2519
dc.description.codenJPAPB
dc.identifier.isiutA1997XY64500004
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