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https://doi.org/10.1088/0022-3727/30/18/004
DC Field | Value | |
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dc.title | ARXPS analysis of surface compositional change in Ar+ ion bombarded GaAs (100) | |
dc.contributor.author | Pan, J.S. | |
dc.contributor.author | Wee, A.T.S. | |
dc.contributor.author | Huan, C.H.A. | |
dc.contributor.author | Tan, H.S. | |
dc.contributor.author | Tan, K.L. | |
dc.date.accessioned | 2014-11-30T06:41:10Z | |
dc.date.available | 2014-11-30T06:41:10Z | |
dc.date.issued | 1997-09-21 | |
dc.identifier.citation | Pan, J.S., Wee, A.T.S., Huan, C.H.A., Tan, H.S., Tan, K.L. (1997-09-21). ARXPS analysis of surface compositional change in Ar+ ion bombarded GaAs (100). Journal of Physics D: Applied Physics 30 (18) : 2514-2519. ScholarBank@NUS Repository. https://doi.org/10.1088/0022-3727/30/18/004 | |
dc.identifier.issn | 00223727 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/113227 | |
dc.description.abstract | Angle-resolved x-ray photoelectron spectroscopy (ARXPS) has been used to study surface compositional changes in GaAs (100) as a consequence of 1 to 5 keV Ar+ ion bombardment. Prior to Ar+ ion bombardment, the ARXPS measurements showed that neglecting surface contamination, the composition of the GaAs surface was close to its stoichiometric value of 1:1. After Ar+ ion bombardment, the oxide layer was efficiently removed. At steady state the altered layers induced by 1-5 keV Ar+ ion bombardment were, on average, Ga-rich up to the sampling depth of the ARXPS technique. The ARXPS measurements also showed that the depth profile of the altered layer was a function of Ar+ ion energy. The altered layer induced by 1 keV Ar+ ion bombardment was inhomogeneous as a function of depth and appeared richer in Ga on the surface than in the subsurface region, that by 3 keV Ar+ ion bombardment was homogeneous and that by 5 keV Ar+ ion bombardment was less Ga-rich on the surface than in the subsurface region. The results are discussed in the context of preferential sputtering, radiation-enhanced diffusion/segregation, and altered layer thickness dependence on Ar+ ion energy. | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | INST OF MATERIALS RESEARCH & ENGINEERING | |
dc.contributor.department | PHYSICS | |
dc.description.doi | 10.1088/0022-3727/30/18/004 | |
dc.description.sourcetitle | Journal of Physics D: Applied Physics | |
dc.description.volume | 30 | |
dc.description.issue | 18 | |
dc.description.page | 2514-2519 | |
dc.description.coden | JPAPB | |
dc.identifier.isiut | A1997XY64500004 | |
Appears in Collections: | Staff Publications |
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