Please use this identifier to cite or link to this item:
Title: Atomic force microscopy investigation of the O2 +-induced surface topography of InP
Authors: Pan, J.S. 
Tay, S.T.
Huan, C.H.A. 
Wee, A.T.S. 
Keywords: AFM
Ion bombardment
Surface topography
X-ray photoelectron spectroscopy
Issue Date: Nov-1998
Citation: Pan, J.S.,Tay, S.T.,Huan, C.H.A.,Wee, A.T.S. (1998-11). Atomic force microscopy investigation of the O2 +-induced surface topography of InP. Surface and Interface Analysis 26 (12) : 930-938. ScholarBank@NUS Repository.
Abstract: The surface topography development of InP as a function of O2 + ion energy and incident angle was investigated using atomic force microscopy (AFM). Cone formation was found to be the dominant surface feature under various O2 + ion bombarding conditions. However, variations in the density and size of the cones at different O2 + ion bombardment conditions were observed. The variation of surface topography with O2 + ion bombardment conditions is correlated with changes in InP surface composition. The results support an intrinsic model of cone formation, which postulates that the sputtering of InP causes In enrichment at the surface due to the preferential sputtering of phosphorus from InP. Furthermore, radiation-enhanced surface diffusion results in agglomeration of indium atoms into indium clusters. These indium clusters seed the development of sputter cones due to the difference in sputter rates of InP and indium. © 1998 John Wiley & Sons, Ltd.
Source Title: Surface and Interface Analysis
ISSN: 01422421
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

checked on Aug 16, 2019

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.