Full Name
Ramam, Akkipeddi
Variants
Raman, A.
Ramam, A.
Akkipeddi, R.
AKKIPEDDI, RAMAM
 
 
 

Results 1-20 of 22 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
128-Feb-2005Contact pressure measurement using silicon-based AlxGa 1-xAs semiconductor pressure sensorsTun, T.N.; Lok, T.S. ; Jui, T.C. ; Akkipeddi, R. ; Rahman, M. 
23-May-2006CONTACT PRESSURE SENSOR AND METHOD FOR MANUFACTURING THE SAMEAKKIPEDDI, RAMAM ; SPERRING, CHRISTOPHER PHILIP; TOH, SIEW LOK ; TAY, CHO JUI ; RAHMAN, MUSTAFIZUR ; CHUA, SOO JIN 
313-Jan-2005CONTACT PRESSURE SENSOR AND METHOD FOR MANUFACTURING THE SAMEAKKIPEDDI, RAMAM ; SPERRING, CHRISTOPHER PHILIP; TOH, SIEW LOK ; TAY, CHO JUI ; RAHMAN, MUSTAFIZUR ; CHUA, SOO JIN 
431-Oct-2006Contact pressure sensor and method for manufacturing the sameAKKIPEDDI, RAMAM ; SPERRING, CHRISTOPHER P; TOH, SIEW LOK ; TAY, CHO JUI ; RAHMAN, MUSTAFIZUR ; CHUA, SOO JIN 
5Feb-1994Distribution of photoresist over GaAs mesa structuresRamam, A. ; Chua, S.J. 
61996Double heterostructure laser diode emitting at 1·06 μm using quaternary alloy of InGaAlAsChua, S.J. ; Ramam, A. ; Lim, N. ; Gopalakrishnan, R. ; Tan, K.L. 
71995Effect of rapid thermal annealing on the structural and electrical properties of a silicon-silicon oxide systemChoi, W.K. ; Chan, Y.M.; Ah, L.K.; Loh, F.C. ; Tan, K.L. ; Ramam, A. 
82000Etching of GaN using Inductively Coupled PlasmaRamam, A. ; Chua, S.J. 
9Feb-1997Evaluation of III-V multilayer transport parameters using quantitative mobility spectrum analysisAntoszewski, J.; Dell, J.M.; Faraone, L.; Tan, L.S. ; Raman, A. ; Chua, S.J. ; Holmes, D.S.; Lindemuth, J.R.; Meyer, J.R.
10May-1995Exploratory observations of effect of rapid thermal processing on silicon minority carrier lifetime using laser microwave photoconductance methodChoi, W.K. ; Ah, L.K.; Chan, Y.M.; Raman, A. 
11Mar-1998Features of InGaAlAs/InP heterostructuresRamam, A. ; Chua, S.J. 
12Mar-1998Features of InGaAlAs/InP heterostructuresRamam, A. ; Chua, S.J. 
13Jun-2000Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealingTan, L.S. ; Prakash, S. ; Ng, K.M.; Ramam, A. ; Chua, S.J. ; Wee, A.T.S. ; Lim, S.L. 
14Feb-1995Growth and investigation of quaternary III-III-III-V InGaAlAs alloy layers on InP by molecular beam epitaxyFeng, Z.C. ; Chua, S.J. ; Raman, A. ; Williams, K.J.
152-Nov-1995Heavily silicon doped InGaAlAs InP epilayers grown by molecular beam epitaxyRamam, A. ; Chua, S.J. ; Karunasiri, G. ; Vaya, P.R. 
16Apr-2000Inductively coupled plasma etching of GaN using BCl3/Cl2 chemistry and photoluminescence studies of the etched samplesRemashan, K.; Chua, S.J. ; Ramam, A. ; Prakash, S. ; Liu, W.
1715-Dec-1996Lattice vibrations in In1-x-yGaxAlxAs quaternary alloysRamam, A. ; Chua, S.J. 
18May-1997Luminescence anomaly in band gap tailored In0.53(GaxAl1-x)0.147As quaternary alloy grown by molecular beam epitaxyRamam, A. ; Chua, S.J. 
19May-1996Molecular-beam epitaxy of high quality lattice matched In1-x-yGaxAlyAs epitaxial layers on InP substratesChua, S.J. ; Ramam, A. 
201997Schottky contacts and conduction band offsets in bandgap engineered InGaAlAs/InP heterostructuresChua, S.J. ; Ramam, A.