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https://doi.org/10.1088/0268-1242/15/4/313
Title: | Inductively coupled plasma etching of GaN using BCl3/Cl2 chemistry and photoluminescence studies of the etched samples | Authors: | Remashan, K. Chua, S.J. Ramam, A. Prakash, S. Liu, W. |
Issue Date: | Apr-2000 | Citation: | Remashan, K., Chua, S.J., Ramam, A., Prakash, S., Liu, W. (2000-04). Inductively coupled plasma etching of GaN using BCl3/Cl2 chemistry and photoluminescence studies of the etched samples. Semiconductor Science and Technology 15 (4) : 386-389. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/15/4/313 | Abstract: | Inductively coupled plasma (ICP) etching of GaN is investigated using BCl3/Cl2 chemistry. The maximum etch rate is observed when the percentage of Cl2 in the BCl3/Cl2 gas mixture is about 80-100%. From photoluminescence (PL) study of the etched GaN samples, we found that the ICP etching creates non-radiative surface recombination states and it has been observed that the creation of surface states is a minimum when the Cl2 in the BCl3/Cl2, mixture is about 90-100%. The atomic force microscope (AFM) study shows that the etching does not make the surface rough and the root mean square (rms) roughness of the etched surface is about 3-5 nm. | Source Title: | Semiconductor Science and Technology | URI: | http://scholarbank.nus.edu.sg/handle/10635/80593 | ISSN: | 02681242 | DOI: | 10.1088/0268-1242/15/4/313 |
Appears in Collections: | Staff Publications |
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