Full Name
Lakshmi Kanta Bera
Variants
Bera, L.K.
 
 
 

Publications

Results 1-20 of 20 (Search time: 0.003 seconds).

Issue DateTitleAuthor(s)
120-Nov-2002C-V and DLTS characterization of rapid thermal oxides on Si0.887Ge0.113 and Si0.8811Ge0.113C0.0059 alloysFeng, W.; Choi, W.K. ; Bera, L.K. ; Mi, J.; Yang, C.Y.
2Aug-2001Effect of post-oxidation annealing on the electrical properties of deposited oxide and oxynitride films on strained-Si0.82Ge0.18 layersSamanta, S.K.; Maikap, S.; Bera, L.K. ; Banerjee, H.D.; Maiti, C.K.
318-Sep-2000Effects of nitric-oxide-plasma treatment on the electrical properties of tetraethylorthosilicate-deposited silicon dioxides on strained-Si1-xGex layersSenapati, B.; Samanta, S.K.; Maikap, S.; Bera, L.K. ; Maiti, C.K.
4Feb-2002Effects of thermal annealing on the electrical properties of tetraethylorthosilicate-based oxynitride films deposited on strained-Si1-xGexSamanta, S.K.; Bera, L.K. ; Benerjee, H.D.; Maiti, C.K.
510-Jul-2000Electrical properties of rapid thermal oxides on Si1-x-yGexCy filmsBera, L.K. ; Choi, W.K. ; Feng, W.; Yang, C.Y.; Mi, J.
6Aug-2001High quality gate dielectrics grown by rapid thermal processing using split-N 2O technique on strained-Si 0.91Ge 0.09 filmsBera, L.K. ; Choi, W.K. ; Tan, C.S.; Samanta, S.K.; Maiti, C.K.
71-Mar-2003Interface properties and reliability of ultrathin oxynitride films grown on strained Si1-xGex substratesSamanta, S.K.; Chatterjee, S.; Maikap, S.; Bera, L.K. ; Banerjee, H.D.; Maiti, C.K.
8Sep-2004Investigation of electrical properties of furnace grown gate oxide on strained-SiBera, L.K. ; Mathew, S.; Balasubramanian, N. ; Leitz, C.; Braithwaite, G.; Singaporewala, F.; Yap, J.; Carlin, J.; Langdo, T.; Lochtefeld, T.; Currie, M.; Hammond, R.; Fiorenza, J.; Badawi, H.; Bulsara, M.
91-Jan-2002Microstructural characterization of rf sputtered polycrystalline silicon germanium filmsChoi, W.K. ; Teh, L.K.; Bera, L.K. ; Chim, W.K. ; Wee, A.T.S. ; Jie, Y.X. 
10Nov-2001N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVDTan, C.S.; Choi, W.K. ; Bera, L.K. ; Pey, K.L. ; Antoniadis, D.A.; Fitzgerald, E.A.; Currie, M.T.; Maiti, C.K.
11Dec-2001Optical characterization of as-prepared and rapid thermal oxidized partially strain compensated Si1-x-y GexCy filmsFeng, W.; Choi, W.K. ; Bera, L.K. ; Ji, M.; Yang, C.Y.
12Nov-2001Rapid thermal oxidation of radio frequency sputtered polycrystalline Si1-xGex thin filmsNatarajan, A.; Bera, L.K. ; Choi, W.K. ; Osipowicz, T. ; Seng, H.L. 
1315-Feb-2002Rapid thermal oxidation of radio frequency sputtered polycrystalline silicon germanium filmsChoi, W.K. ; Natarajan, A.; Bera, L.K. ; Wee, A.T.S. ; Liu, Y.J. 
14Jan-2003Reliability of ultrathin (Samanta, S.K.; Chatterjee, S.; Choi, W.K.; Bera, L.K. ; Banerjee, H.D.; Maiti, C.K.
15Dec-2001Spectroscopic ellipsometry and electrical studies of as-grown and rapid thermal oxidized Si1-x-yGexCy filmsChoi, W.K. ; Feng, W.; Bera, L.K. ; Yang, C.Y.; Mi, J.
162001Structural and electrical characterizations of oxynitride films on solid phase epitaxially grown silicon carbideBera, L.K. ; Choi, W.K. ; McNeill, D.; Ray, S.K.; Chatterjee, S.; Maiti, C.K.
17Nov-2001Structural characterisation of polycrystalline SiGe thin filmTeh, L.K.; Choi, W.K. ; Bera, L.K. ; Chim, W.K. 
181-Jan-2000Structural characterization of rapid thermal oxidized Si1-x-yGexCy alloy films grown by rapid thermal chemical vapor depositionChoi, W.K. ; Chen, J.H. ; Bera, L.K. ; Feng, W.; Pey, K.L. ; Mi, J.; Yang, C.Y.; Ramam, A. ; Chua, S.J. ; Pan, J.S. ; Wee, A.T.S. ; Liu, R. 
191-Jun-2000Structural characterization of rapid thermally oxidized silicon-germanium-carbon alloy filmsChoi, W.K. ; Bera, L.K. ; Chen, J.H. ; Feng, W.; Pey, K.L. ; Yoong, H.; Mi, J.; Zhang, F.; Yang, C.Y.
20Sep-2004Wet etching characteristics and surface morphology evaluation of MOCVD grown HfO2 filmBalasubramanian, M.; Bera, L.K. ; Mathew, S.; Balasubramanian, N. ; Lim, V.; Joo, M.S. ; Cho, B.J.