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|Title:||Rapid thermal oxidation of radio frequency sputtered polycrystalline silicon germanium films||Authors:||Choi, W.K.
|Issue Date:||15-Feb-2002||Citation:||Choi, W.K., Natarajan, A., Bera, L.K., Wee, A.T.S., Liu, Y.J. (2002-02-15). Rapid thermal oxidation of radio frequency sputtered polycrystalline silicon germanium films. Journal of Applied Physics 91 (4) : 2443-2448. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1431435||Abstract:||The oxide growth of rf sputtered polycrystalline Si 1-xGe x films was found not sensitive to the Ge concentration in the films. The infrared results showed that the oxide grown on Si 0.61Ge 0.39 film mainly contained GeO 2 and the oxide contained Ge-O-Ge and Si-O-Ge bonds when grown on Si 0.73Ge 0.27 film. X-ray photoelectron spectroscopy results showed the absence of Ge in the bulk of the oxides for Si 1-xGe x films with x||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/113098||ISSN:||00218979||DOI:||10.1063/1.1431435|
|Appears in Collections:||Staff Publications|
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