Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1431435
Title: Rapid thermal oxidation of radio frequency sputtered polycrystalline silicon germanium films
Authors: Choi, W.K. 
Natarajan, A.
Bera, L.K. 
Wee, A.T.S. 
Liu, Y.J. 
Issue Date: 15-Feb-2002
Citation: Choi, W.K., Natarajan, A., Bera, L.K., Wee, A.T.S., Liu, Y.J. (2002-02-15). Rapid thermal oxidation of radio frequency sputtered polycrystalline silicon germanium films. Journal of Applied Physics 91 (4) : 2443-2448. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1431435
Abstract: The oxide growth of rf sputtered polycrystalline Si 1-xGe x films was found not sensitive to the Ge concentration in the films. The infrared results showed that the oxide grown on Si 0.61Ge 0.39 film mainly contained GeO 2 and the oxide contained Ge-O-Ge and Si-O-Ge bonds when grown on Si 0.73Ge 0.27 film. X-ray photoelectron spectroscopy results showed the absence of Ge in the bulk of the oxides for Si 1-xGe x films with x
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/113098
ISSN: 00218979
DOI: 10.1063/1.1431435
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