Please use this identifier to cite or link to this item:
|Title:||N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD||Authors:||Tan, C.S.
|Issue Date:||Nov-2001||Citation:||Tan, C.S., Choi, W.K., Bera, L.K., Pey, K.L., Antoniadis, D.A., Fitzgerald, E.A., Currie, M.T., Maiti, C.K. (2001-11). N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD. Solid-State Electronics 45 (11) : 1945-1949. ScholarBank@NUS Repository. https://doi.org/10.1016/S0038-1101(01)00238-6||Abstract:||Oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD method using a rapid thermal processing technique in N2O ambient is investigated. The electrical properties of the grown oxide have been characterized using a MOS structure. Hole confinement in the SiGe layer at low field is observed from the capacitance-voltage curve and this suggests that the strain in the initially strained Si epilayer is retained after oxidation. The experimental results are compared with simulation results obtained from a 1D Poisson solver. Dit and Qf/q values are estimated to be 3 × 1011 cm-2eV-1 and -1.2 × 1011 cm-2, respectively. These high values of Dit and negative Qf/q could possibly be due to Ge out diffusion and pile up at the SiO2/strained-Si interface. The oxide exhibits an excellent breakdown field of 15 MVcm-1. © 2001 Elsevier Science Ltd. All rights reserved.||Source Title:||Solid-State Electronics||URI:||http://scholarbank.nus.edu.sg/handle/10635/82738||ISSN:||00381101||DOI:||10.1016/S0038-1101(01)00238-6|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 19, 2020
WEB OF SCIENCETM
checked on Oct 12, 2020
checked on Oct 4, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.