Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0038-1101(01)00238-6
Title: N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD
Authors: Tan, C.S.
Choi, W.K. 
Bera, L.K. 
Pey, K.L. 
Antoniadis, D.A.
Fitzgerald, E.A.
Currie, M.T.
Maiti, C.K.
Keywords: N2O oxidation
Strained-Si/relaxed-SiGe heterostructure
Issue Date: Nov-2001
Citation: Tan, C.S., Choi, W.K., Bera, L.K., Pey, K.L., Antoniadis, D.A., Fitzgerald, E.A., Currie, M.T., Maiti, C.K. (2001-11). N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD. Solid-State Electronics 45 (11) : 1945-1949. ScholarBank@NUS Repository. https://doi.org/10.1016/S0038-1101(01)00238-6
Abstract: Oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD method using a rapid thermal processing technique in N2O ambient is investigated. The electrical properties of the grown oxide have been characterized using a MOS structure. Hole confinement in the SiGe layer at low field is observed from the capacitance-voltage curve and this suggests that the strain in the initially strained Si epilayer is retained after oxidation. The experimental results are compared with simulation results obtained from a 1D Poisson solver. Dit and Qf/q values are estimated to be 3 × 1011 cm-2eV-1 and -1.2 × 1011 cm-2, respectively. These high values of Dit and negative Qf/q could possibly be due to Ge out diffusion and pile up at the SiO2/strained-Si interface. The oxide exhibits an excellent breakdown field of 15 MVcm-1. © 2001 Elsevier Science Ltd. All rights reserved.
Source Title: Solid-State Electronics
URI: http://scholarbank.nus.edu.sg/handle/10635/82738
ISSN: 00381101
DOI: 10.1016/S0038-1101(01)00238-6
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