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https://doi.org/10.1016/S0038-1101(01)00238-6
| Title: | N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD | Authors: | Tan, C.S. Choi, W.K. Bera, L.K. Pey, K.L. Antoniadis, D.A. Fitzgerald, E.A. Currie, M.T. Maiti, C.K. |
Keywords: | N2O oxidation Strained-Si/relaxed-SiGe heterostructure |
Issue Date: | Nov-2001 | Citation: | Tan, C.S., Choi, W.K., Bera, L.K., Pey, K.L., Antoniadis, D.A., Fitzgerald, E.A., Currie, M.T., Maiti, C.K. (2001-11). N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD. Solid-State Electronics 45 (11) : 1945-1949. ScholarBank@NUS Repository. https://doi.org/10.1016/S0038-1101(01)00238-6 | Abstract: | Oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD method using a rapid thermal processing technique in N2O ambient is investigated. The electrical properties of the grown oxide have been characterized using a MOS structure. Hole confinement in the SiGe layer at low field is observed from the capacitance-voltage curve and this suggests that the strain in the initially strained Si epilayer is retained after oxidation. The experimental results are compared with simulation results obtained from a 1D Poisson solver. Dit and Qf/q values are estimated to be 3 × 1011 cm-2eV-1 and -1.2 × 1011 cm-2, respectively. These high values of Dit and negative Qf/q could possibly be due to Ge out diffusion and pile up at the SiO2/strained-Si interface. The oxide exhibits an excellent breakdown field of 15 MVcm-1. © 2001 Elsevier Science Ltd. All rights reserved. | Source Title: | Solid-State Electronics | URI: | http://scholarbank.nus.edu.sg/handle/10635/82738 | ISSN: | 00381101 | DOI: | 10.1016/S0038-1101(01)00238-6 |
| Appears in Collections: | Staff Publications |
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