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Pey Kin Leong

rp03121

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Full Name
Pey Kin Leong
Variants
PEY, KIN-LEONG
PEY, KIN L.
LEONG, KIN
Pey, Kin Leong
PEY, KIN LEONG
Pey, K.L.
 
Main Affiliation
 
Faculty
 

Publications

Results 1-20 of 70 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
12001A comparative study of nickel silicide formation using a titanium cap layer and a titanium interlayerTan, W.L.; Pey, K.L. ; Chooi, S.Y.M. ; Ye, J.H.
229-May-2000Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depthsChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; See, A.; Chan, L.; Lu, Y.F.; Song, W.D.; Chua, L.H.
32000Application of excimer laser annealing in the formation of ultra-shallow p+/n junctionsChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; See, A. ; Tung, C.-H. ; Gopalakrishnan, R. ; Lu, Y.F. 
41995Cathodoluminescence contrast of localized defects part I. Numerical model for simulationPey, K.L. ; Chan, D.S.H. ; Phang, J.C.H. ; Breese, J.F.; Myhajlenko, S.
51995Cathodoluminescence contrast of localized defects part II. Defect investigationPey, K.L. ; Phang, J.C.H. ; Chan, D.S.H. ; Breeze, J.F.; Myhajlenko, S.
65-Mar-1997Cathodoluminescence detectorPHANG, JACOB CHEE HONG ; CHAN, DANIEL SIU HUNG ; PEY, KIN LEONG 
72000Characterization of Ni- and Ni(Pt)-silicide formation on narrow polycrystalline Si lines by Raman spectroscopyLee, P.S.; Mangelinck, D.; Pey, K.L. ; Ding, J. ; Osipowicz, T. ; Ho, C.S.; Chen, G.L.; Chan, L.
84-Jan-2000Cmos gate architecture for integration of salicide process in sub 0.1. .muM devicesHO, CHAW SING; KARUNASIRI, R. P. G. ; CHUA, SOO JIN ; PEY, KIN LEONG ; LEE, KONG HEAN
9Dec-2001Combined low-frequency noise and resistance measurements for void extraction in deep-submicrometer interconnectsChu, L.W.; Chim, W.K. ; Pey, K.L. ; Yeo, J.Y.K.; Chan, L.
101-Aug-2002Control of transient enhanced diffusion of boron after laser thermal processing of preamorphized siliconChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; Osipowicz, T. ; See, A.; Chan, L.
111996Design and characterisation of a single-reflection, solid-state detector with high discrimination against backscattered electrons for cathodoluminescence microscopyPey, K.L. ; Phang, J.C.H. ; Chan, D.S.H. ; Leong, Y.K.
1221-Nov-1995Double reflection cathodoluminescence detector with extremely high discrimination against backscattered electronsCHAN, DANIEL S. H. ; LEONG, KIN ; PHANG, JACOB C. H. 
1315-Feb-2002Effect of a titanium cap in reducing interfacial oxides in the formation of nickel silicideTan, W.L.; Pey, K.L. ; Chooi, S.Y.M.; Ye, J.H.; Osipowicz, T. 
14Sep-2000Effect of BF2 + implantation on void formation in Ti-salicided narrow polysilicon linesPey, K.L. ; Chua, H.N.; Siah, S.Y.
1531-Dec-2001Effect of current direction on the lifetime of different levels of Cu dual-damascene metallizationGan, C.L.; Thompson, C.V.; Pey, K.L. ; Choi, W.K. ; Tay, H.L.; Yu, B.; Radhakrishnan, M.K.
16Sep-2002Effect of ion implantation on layer inversion of Ni silicided poly-SiLee, P.S.; Pey, K.L. ; Mangelinck, D.; Ding, J. ; Chi, D.Z.; Osipowicz, T. ; Dai, J.Y.; Chan, L.
172001Effect of transmission line pulsing of interconnects investigated using combined low-frequency noise and resistance measurementsChu, L.W.; Chim, W.K. ; Pey, K.L. ; See, A. 
181-Oct-2000Effects of high current conduction in sub-micron Ti-silicided filmsGan, C.L.; Pey, K.L. ; Chim, W.K. ; Siah, S.Y.
19Mar-2002Effects of post-deposition anneal on the electrical properties of Si3N4 gate dielectricLin, W.H.; Pey, K.L. ; Dong, Z.; Chooi, S.Y.-M.; Zhou, M.S.; Ang, T.C.; Ang, C.H.; Lau, W.S.; Ye, J.H.
20Jan-2002Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stackLee, P.S.; Mangelinck, D.; Pey, K.L. ; Ding, J. ; Chi, D.Z.; Osipowicz, T. ; Dai, J.Y.; See, A.