Effect of ion implantation on layer inversion of Ni silicided poly-Si

Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.1494828

Title:	Effect of ion implantation on layer inversion of Ni silicided poly-Si
Authors:	Lee, P.S. Pey, K.L. Mangelinck, D. Ding, J. Chi, D.Z. Osipowicz, T. Dai, J.Y. Chan, L.
Issue Date:	Sep-2002
Citation:	Lee, P.S., Pey, K.L., Mangelinck, D., Ding, J., Chi, D.Z., Osipowicz, T., Dai, J.Y., Chan, L. (2002-09). Effect of ion implantation on layer inversion of Ni silicided poly-Si. Journal of the Electrochemical Society 149 (9) : G505-G509. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1494828
Abstract:	The effect of ion implantation on the behavior and extent of layer inversion in Ni-silicided poly-Si was investigated. Two different implantation species, namely, BF2 + and N2 +, which affect the poly-Si grain growth were used. Retarded layer inversion was found with the ion-implanted poly-Si substrates. However, the formation of NiSi2 takes place at 700°C, which is slightly lower than that on Si(100). The easy nucleation of NiSi2 on poly-Si is implicitly related to the morphology perturbation.
Source Title:	Journal of the Electrochemical Society
URI:	http://scholarbank.nus.edu.sg/handle/10635/82202
ISSN:	00134651
DOI:	10.1149/1.1494828
Appears in Collections:	Staff Publications

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