Please use this identifier to cite or link to this item:
|Title:||Effect of BF2 + implantation on void formation in Ti-salicided narrow polysilicon lines||Authors:||Pey, K.L.
|Issue Date:||Sep-2000||Citation:||Pey, K.L.,Chua, H.N.,Siah, S.Y. (2000-09). Effect of BF2 + implantation on void formation in Ti-salicided narrow polysilicon lines. Electrochemical and Solid-State Letters 3 (9) : 442-445. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1391174||Abstract:||We report the formation of voids in TiSi2 films formed on deep submicron BF2(+)-implanted polysilicon (polySi) lines. The void formation was strongly dependent on BF2(+)-implant dose, the p+ annealing temperature, and the polySi linewidth. Using plan-view scanning electron microscopy and cross-sectional transmission electron microscopy, both surface and subsurface voids were observed. The voids were distributed predominantly along the center of the p+ polySi lines and near the TiSi2/polySi interface, especially for linewidths less than subquarter-micrometer. X-ray photoemission spectroscopic analysis detected a mixture of SiFx (1 ≤ x ≤ 4) and TiFx (x = 3, 4) like species near the TiSi2/polySi interface during an in situ annealing of Ti and Si, providing further evidence that the voids are fluorine-assisted species.||Source Title:||Electrochemical and Solid-State Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/80365||ISSN:||10990062||DOI:||10.1149/1.1391174|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 22, 2019
checked on May 21, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.