Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.1391174
Title: Effect of BF2 + implantation on void formation in Ti-salicided narrow polysilicon lines
Authors: Pey, K.L. 
Chua, H.N.
Siah, S.Y.
Issue Date: Sep-2000
Source: Pey, K.L.,Chua, H.N.,Siah, S.Y. (2000-09). Effect of BF2 + implantation on void formation in Ti-salicided narrow polysilicon lines. Electrochemical and Solid-State Letters 3 (9) : 442-445. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1391174
Abstract: We report the formation of voids in TiSi2 films formed on deep submicron BF2(+)-implanted polysilicon (polySi) lines. The void formation was strongly dependent on BF2(+)-implant dose, the p+ annealing temperature, and the polySi linewidth. Using plan-view scanning electron microscopy and cross-sectional transmission electron microscopy, both surface and subsurface voids were observed. The voids were distributed predominantly along the center of the p+ polySi lines and near the TiSi2/polySi interface, especially for linewidths less than subquarter-micrometer. X-ray photoemission spectroscopic analysis detected a mixture of SiFx (1 ≤ x ≤ 4) and TiFx (x = 3, 4) like species near the TiSi2/polySi interface during an in situ annealing of Ti and Si, providing further evidence that the voids are fluorine-assisted species.
Source Title: Electrochemical and Solid-State Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/80365
ISSN: 10990062
DOI: 10.1149/1.1391174
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