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|Title:||Effect of a titanium cap in reducing interfacial oxides in the formation of nickel silicide||Authors:||Tan, W.L.
|Issue Date:||15-Feb-2002||Citation:||Tan, W.L., Pey, K.L., Chooi, S.Y.M., Ye, J.H., Osipowicz, T. (2002-02-15). Effect of a titanium cap in reducing interfacial oxides in the formation of nickel silicide. Journal of Applied Physics 91 (5) : 2901-2909. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1448672||Abstract:||Interfacial silicon oxide present at the Ni-Si interface hampers the silicidation between Ni and Si. In this work we present findings of the interaction of a Ti cap layer on top of Ni to remove the interfacial native oxide and chemically grown silicon oxide at several annealing temperatures. It was found that at 500°C, Ti diffuses through the Ni layer and segregates at the Ni/Si interface, which subsequently reduces the interfacial silicon oxide and enables nickel monosilicide (NiSi) formation at 600°C. The thickness of the Ti cap layer was found to strongly influence the temperature of the onset of nickel silicidation. A thin Ti cap layer resulted in the onset temperature of nickel silicidation being the same as that without a Ti cap layer, whereas a thick Ti cap layer lowered the onset temperature of the nickel silicidation. © 2002 American Institute of Physics.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/55736||ISSN:||00218979||DOI:||10.1063/1.1448672|
|Appears in Collections:||Staff Publications|
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