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Title: Effect of a titanium cap in reducing interfacial oxides in the formation of nickel silicide
Authors: Tan, W.L.
Pey, K.L. 
Chooi, S.Y.M.
Ye, J.H.
Osipowicz, T. 
Issue Date: 15-Feb-2002
Citation: Tan, W.L., Pey, K.L., Chooi, S.Y.M., Ye, J.H., Osipowicz, T. (2002-02-15). Effect of a titanium cap in reducing interfacial oxides in the formation of nickel silicide. Journal of Applied Physics 91 (5) : 2901-2909. ScholarBank@NUS Repository.
Abstract: Interfacial silicon oxide present at the Ni-Si interface hampers the silicidation between Ni and Si. In this work we present findings of the interaction of a Ti cap layer on top of Ni to remove the interfacial native oxide and chemically grown silicon oxide at several annealing temperatures. It was found that at 500°C, Ti diffuses through the Ni layer and segregates at the Ni/Si interface, which subsequently reduces the interfacial silicon oxide and enables nickel monosilicide (NiSi) formation at 600°C. The thickness of the Ti cap layer was found to strongly influence the temperature of the onset of nickel silicidation. A thin Ti cap layer resulted in the onset temperature of nickel silicidation being the same as that without a Ti cap layer, whereas a thick Ti cap layer lowered the onset temperature of the nickel silicidation. © 2002 American Institute of Physics.
Source Title: Journal of Applied Physics
ISSN: 00218979
DOI: 10.1063/1.1448672
Appears in Collections:Staff Publications

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